22-Elec-B10 Electro-Optical Engineering · December 2017
Question 3 of 7: InGaAsP Fabry–Perot laser diode — photon and carrier lifetimes, mode spacing and output power
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Notes on this paper
Paper format. 16-Elec-B10, Electro-Optical Engineering —
National Exams, December 2017. Three hours, closed book; one 8.5 in × 11 in
double-sided sheet of hand-written notes and a Casio or Sharp approved calculator are
permitted. Seven questions, all of equal value (20 marks each); the rubric says
any five questions constitute a complete paper. All seven are solved below,
because the set is a study resource rather than a timed sitting.
Reference texts.
G. Keiser, Optical Fiber Communications, 4th ed. — fibre modes,
dispersion, link power and rise-time budgets, photodetectors.
J. M. Senior, Optical Fiber Communications: Principles and Practice, 3rd ed.
— numerical aperture, intermodal/intramodal dispersion, receiver noise.
B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, 3rd ed. —
laser rate equations, photon lifetime, electro-optic modulators.
J. Wilson and J. F. B. Hawkes, Optoelectronics: An Introduction, 3rd ed.
— pin and avalanche photodiodes, Pockels cells.
Physical constants are the ones printed on page 1 of the examination paper:
$c = 2.998\times10^{8}\ \text{m/s}$, $q = 1.602\times10^{-19}\ \text{C}$,
$h = 6.626\times10^{-34}\ \text{J}\cdot\text{s}$,
$k = 1.381\times10^{-23}\ \text{J/K}$,
$\varepsilon_{0} = 8.854\times10^{-12}\ \text{F/m}$, and for the modulator crystal
$\varepsilon_{r}(\text{LiNbO}_3) = 32$, $n_{o} = 2.30$, $r = 30\ \text{pm/V}$.
Check: two book-keeping notes on the source paper.
The page-5 marking scheme lists five sub-parts, (a)–(e), for Questions 5 and 7, but
the printed questions on pages 3 and 4 carry only four sub-parts each; the mark totals
still come to 20, so the extra row is a marking-sheet artefact and every printed sub-part
is answered here. Question 6 also carries the hand-added annotation
“rework this one” next to its heading — an examiner’s note on the
printed paper, not part of the question. It is solved exactly as printed.
Question 3: InGaAsP Fabry–Perot laser diode — photon and carrier
lifetimes, mode spacing and output power (20 marks)
Given. An index-guided InGaAsP Fabry–Perot laser diode
operating in the 1.55 µm window, with cleaved (uncoated) facets so the reflectance
follows from the refractive index $n = 3.4$ printed on page 1 of the paper.
Given data — Question 3
Quantity
Symbol
Value
Cavity length
$L$
500 µm
Cavity (stripe) width
$W$
1.5 µm
Active-layer depth
$d$
35 nm
Emission wavelength
$\lambda$
1.55 µm
Threshold current
$I_{th}$
37.5 mA
Threshold carrier density
$n_{th}$
$2.6\times10^{18}\ \text{cm}^{-3}$
Distributed material loss
$\alpha_{m}$
15 cm$^{-1}$
Refractive index (InGaAsP, page 1)
$n$
3.4
Find. The photon lifetime, the spontaneous carrier lifetime, the
longitudinal mode spacing and the number of modes falling inside a 2 nm gain window, and
the optical output power at three times threshold.
The Fabry–Perot cavity and its longitudinal-mode comb. The mirror spacing fixes the comb pitch $\Delta\lambda = \lambda^{2}/(2nL)$; the material gain curve selects the handful of comb lines that reach threshold.
Approach. The cleaved facets set the mirror loss, mirror plus
material loss set the photon lifetime, the threshold current and the active volume set the
carrier lifetime, the cavity length sets the mode comb, and the ratio of mirror loss to
total loss (the differential quantum efficiency) converts the above-threshold current into
optical power.
Facet reflectance. A cleaved semiconductor–air interface reflects
at normal incidence with
$$R = \left(\frac{n-1}{n+1}\right)^{2} = \left(\frac{3.4-1}{3.4+1}\right)^{2}
= \left(\frac{2.4}{4.4}\right)^{2} = 0.2975$$
so about 30 % of the power is returned at each end — enough, given the high gain of a
semiconductor active layer, to sustain oscillation without any coating.
Mirror loss and total cavity loss. Spreading the two facet losses
uniformly over one round trip gives the distributed mirror loss
$$\alpha_{\text{mir}} = \frac{1}{L}\ln\!\frac{1}{R}
= \frac{1}{0.05\ \text{cm}}\ln\!\frac{1}{0.2975} = (20)(1.2124)
= 24.25\ \text{cm}^{-1}$$
which, added to the material loss, gives
$\alpha_{\text{tot}} = 15 + 24.25 = 39.25\ \text{cm}^{-1}$. The mirrors are the larger loss
here, which is exactly what one wants in a laser meant to emit rather than to store.
Photon lifetime. A photon travels at the group velocity
$v_{g} = c/n = (2.998\times10^{10})/3.4 = 8.818\times10^{9}\ \text{cm/s}$ and is lost at
the rate $v_{g}\alpha_{\text{tot}}$, so
$$\tau_{p} = \frac{1}{v_{g}\,\alpha_{\text{tot}}}
= \frac{1}{(8.818\times10^{9})(39.25)}$$
$$\boxed{\tau_{p} = 2.89\ \text{ps}}$$
Active volume. The three cavity dimensions give
$$V = L\,W\,d = (500\ \mu\text{m})(1.5\ \mu\text{m})(35\ \text{nm})
= 26.25\ \mu\text{m}^{3} = 2.625\times10^{-11}\ \text{cm}^{3}$$
Below threshold every injected carrier recombines spontaneously, so the threshold current
just replaces the carrier population once per spontaneous lifetime,
$$I_{th} = \frac{q\,V\,n_{th}}{\tau_{sp}}
\qquad\Rightarrow\qquad
\tau_{sp} = \frac{q\,V\,n_{th}}{I_{th}}
= \frac{(1.602\times10^{-19})(2.625\times10^{-11})(2.6\times10^{18})}{37.5\times10^{-3}}$$
$$\boxed{\tau_{sp} = 292\ \text{ps}}$$
The carrier lifetime is two orders of magnitude longer than the photon lifetime, which is
the condition that makes the laser relaxation-oscillate rather than switch cleanly.
Longitudinal mode spacing. Adjacent axial modes differ by one
half-wavelength in the cavity, giving
$$\Delta\lambda = \frac{\lambda^{2}}{2 n L}
= \frac{(1.55\times10^{-6})^{2}}{2(3.4)(500\times10^{-6})}
= 7.066\times10^{-10}\ \text{m}$$
$$\boxed{\Delta\lambda = 0.707\ \text{nm}}$$
Number of oscillating modes. Dividing the 2 nm gain window by the comb
pitch,
$$N = \frac{\Delta\lambda_{\text{gain}}}{\Delta\lambda} = \frac{2.0}{0.7066} = 2.83$$
so the central mode plus its two nearest neighbours fall inside the window:
$$\boxed{N = 3\ \text{longitudinal modes}}$$
This is the signature of a Fabry–Perot device; suppressing the side modes to obtain
single-frequency output requires a distributed-feedback or DBR structure.
Output power at $3I_{th}$. Above threshold the carrier density is
clamped, so every extra injected electron produces one photon, of which the fraction
$\alpha_{\text{mir}}/\alpha_{\text{tot}}$ escapes through the facets. The external
differential quantum efficiency is therefore
$$\eta_{d} = \eta_{i}\,\frac{\alpha_{\text{mir}}}{\alpha_{\text{tot}}}
= (1)\frac{24.25}{39.25} = 0.618$$
and with a photon energy $h\nu = hc/\lambda = 1.282\times10^{-19}\ \text{J} = 0.800$ eV,
$$P = \eta_{d}\,\frac{h\nu}{q}\,(I - I_{th})
= (0.618)(0.800\ \text{V})(3 - 1)(37.5\ \text{mA})$$
$$\boxed{P = 37.1\ \text{mW}}$$
summed over both facets, i.e. roughly 18.5 mW out of each end of a symmetric cavity.
Check: two stated assumptions in part (d).
The paper gives no internal quantum efficiency, so $\eta_{i} = 1$ is assumed (a good
approximation for a well-made InGaAsP device near threshold); and the facets are taken as
uncoated cleaves, so $R$ follows from $n = 3.4$. The quoted 37.1 mW is the
total emitted power. If only one facet is collected, halve it. A lower $\eta_{i}$
scales the answer proportionally.