22-Elec-B8 Power Electronics and Drives · December 2018
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Paper format. National Exams, December 2018 — 16-Elec-B8 Power Electronics and Drives. Three hours, open book, any non-communicating calculator. Six problems of equal value; any five constitute a complete paper. All six are solved here, because the set is a study resource rather than a three-hour sitting.
Reference texts.
Check: how the printed part-lettering is handled. PROBLEM 4 and PROBLEM 6 each open with an unlettered descriptive item and then resume lettering at a-; PROBLEM 4 additionally skips b-, running a-, c-, d-. The solution keeps the exam's own lettering verbatim and answers the unlettered lead item first, so that every printed item is covered and the marks add to 20 per problem.
Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.
Given. A half-wave phase-controlled rectifier is supplied from a 120 V (rms) single-phase source and feeds a series R–L load of power factor 0.707, i.e. load angle $\phi = 45^\circ$. Two operating points are specified by their conduction angles.
| Quantity | Symbol | Value |
|---|---|---|
| Supply (rms) | $V_s$ | 120 V |
| Supply peak | $V_m=\sqrt{2}V_s$ | 169.71 V |
| Load power factor / angle | $\cos\phi$ / $\phi$ | $0.707$ / $45^\circ$ |
| Conduction angle, case (b) | $\gamma_b$ | $145^\circ$ |
| Mean output current, case (b) | $I_{dc,b}$ | 25 A |
| Conduction angle, case (c) | $\gamma_c$ | $150^\circ$ |
Find. Five factors that set the SCR turn-off time; then the delay angle and load resistance at $\gamma = 145^\circ$, and the delay angle and mean current at $\gamma = 150^\circ$ with that same resistance.
Approach. Part (a) is descriptive. Parts (b) and (c) use the same extinction condition as Question 1 to convert a stated conduction angle into a delay angle, after which the fact that an inductor supports no average voltage collapses the whole problem to one algebraic relation between $V_m$, $\alpha$, $\beta$, $R$ and $I_{dc}$.
The turn-off (circuit-commutated) interval $t_q$ is the time that must elapse between the instant the anode current reaches zero and the instant forward voltage may safely be reapplied. It is set by how quickly the excess stored charge in the four-layer structure is removed or recombines, and the following five factors dominate it.
1. The magnitude of the forward current before commutation. The stored charge in the base regions is roughly proportional to the on-state current, so a device carrying its full rated current has far more charge to sweep out than one lightly loaded. A thyristor rated $t_q = 40\ \mu$s at rated current may recover in half that at ten per cent of rated current.
2. The junction temperature. Minority-carrier lifetime rises strongly with temperature, so recombination slows. Between a 25 °C and a 125 °C junction the turn-off time of a typical converter-grade device roughly doubles. Data sheets always quote $t_q$ at the maximum rated junction temperature for exactly this reason.
3. The rate of decay of the anode current, $di/dt$, at commutation. A rapid current fall leaves more of the stored charge trapped in the base rather than carried out by the conduction current, increasing the reverse-recovery charge and lengthening the interval over which the device can still be re-triggered.
4. The magnitude and duration of the reverse voltage applied after commutation. A large reverse anode voltage actively sweeps carriers out of the junction and shortens $t_q$; a device commutated with only a diode drop of reverse bias recovers much more slowly. This is why forced-commutation circuits are designed to hold reverse voltage for a stated minimum time, and it is a design variable rather than a device property.
5. The rate of reapplication of forward voltage, $dv/dt$. Displacement current $C_j\,dv/dt$ through the junction capacitance can re-trigger a device whose charge has not fully recombined. A high reapplied $dv/dt$ therefore demands a longer effective turn-off time; snubber design and $dv/dt$ rating are two faces of the same constraint.
Two further influences are worth noting for completeness: a reverse gate bias applied during recovery shortens $t_q$ by extracting base charge, and lifetime-control processing in manufacture (gold doping or electron irradiation) trades a shorter $t_q$ for a higher on-state voltage — the distinction between converter-grade and inverter-grade thyristors.
It is worth recording how badly the familiar closed-form estimate $\alpha \approx 180^\circ+\phi-\gamma$ performs at this power factor. It predicts $80.0^\circ$ against the true $77.55^\circ$ and $75.0^\circ$ against $73.04^\circ$ — errors of $2.45^\circ$ and $1.96^\circ$, tracking the damping factor $e^{-\gamma/\tan\phi}$ exactly as theory says it should. At $\cos\phi = 0.707$ that estimate is a sanity check only.
| Quantity | Symbol | Value |
|---|---|---|
| Load angle | $\phi$ | $45^\circ$ |
| Delay angle at $\gamma = 145^\circ$ | $\alpha_b$ | $77.55^\circ$ |
| Extinction angle, case (b) | $\beta_b$ | $222.55^\circ$ |
| Mean output voltage, case (b) | $V_{dc,b}$ | 25.72 V |
| Load resistance | $R$ | $1.029\ \Omega$ |
| Delay angle at $\gamma = 150^\circ$ | $\alpha_c$ | $73.04^\circ$ |
| Extinction angle, case (c) | $\beta_c$ | $223.04^\circ$ |
| Mean output current, case (c) | $I_{dc,c}$ | 26.85 A |