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21-Mat-B10 Properties and Processing of Micro- and Nanomaterials: May 2013

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

  1. Question 1 Porosity of a Silver-Infiltrated Tungsten Contact
  2. Question 2 Conduction in Copper — Carrier Fraction, Wire Sizing and Drift Velocity
  3. Question 3 Doping Germanium for a Target Conductivity
  4. Question 4 Intrinsic GaAs — Conductivity, Thermal Sensitivity and Current Split
  5. Question 5 Photon Emission in In-Doped Silicon and an Alumina Multilayer Capacitor
  6. Question 6 Sketches of Electronic, Dielectric, Magnetic and Superconducting Property Dependences

Start with Question 1 →

National Exams — 10-Met-B10, Advanced Electronic Materials — May 2013, 3 hours. Six questions; Question 6 (40 marks) is mandatory and any 4 of the remaining 5 questions (15 marks each) complete the paper. All six are answered below.

Reference texts: S.O. Kasap, Principles of Electronic Materials and Devices; W.D. Callister, Materials Science and Engineering: An Introduction.

Two points matter: Question 4 prints the GaAs carrier density per m³ (not per cm³), which sets the conductivity scale; and the formula sheet prints Planck's constant as h = 4.375×10-15 eV·s, which is not the physical value (4.136×10-15 eV·s) — the standard value is used in Question 5.1 and the result with the printed value is also given.