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21-Mat-B10 Properties and Processing of Micro- and Nanomaterials · May 2013

Question 5 of 6: Photon Emission in In-Doped Silicon and an Alumina Multilayer Capacitor

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

National Exams — 10-Met-B10, Advanced Electronic Materials — May 2013, 3 hours. Six questions; Question 6 (40 marks) is mandatory and any 4 of the remaining 5 questions (15 marks each) complete the paper. All six are answered below.

Reference texts: S.O. Kasap, Principles of Electronic Materials and Devices; W.D. Callister, Materials Science and Engineering: An Introduction.

Two points matter: Question 4 prints the GaAs carrier density per m³ (not per cm³), which sets the conductivity scale; and the formula sheet prints Planck's constant as h = 4.375×10-15 eV·s, which is not the physical value (4.136×10-15 eV·s) — the standard value is used in Question 5.1 and the result with the printed value is also given.

Question 5: Photon Emission in In-Doped Silicon and an Alumina Multilayer Capacitor (15 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

5.1 — Photon wavelengths from the In acceptor level in Si

Given. Silicon bandgap Eg = 1.07 eV; indium acceptor level (above the valence band) Ea = 0.16 eV; Planck's constant h = 4.136×10-15 eV·s (the standard value; the source formula sheet's printed 4.375×10-15 is not the physical constant, see the check note above); speed of light c = 3×1010 cm/s.

Find. The wavelength of the photon emitted when an electron (a) drops from the conduction band to the acceptor band, and (b) drops from the acceptor band to the valence band.

Approach. Each transition's photon energy is the corresponding energy gap; convert to wavelength with λ = hc/E.

  1. (a) Conduction band → acceptor band. This transition spans the gap minus the acceptor level: $$E_{(a)}=E_g-E_a=1.07-0.16=0.91\ \text{eV}$$ $$\lambda_{(a)}=\dfrac{hc}{E_{(a)}}=\dfrac{(4.136\times10^{-15})(3\times10^{10})}{0.91}=1.364\times10^{-4}\ \text{cm}=\boxed{1364\ \text{nm}}\ \ (\text{near-infrared})$$
  2. (b) Acceptor band → valence band. This transition spans only the acceptor level itself: $$\lambda_{(b)}=\dfrac{hc}{E_a}=\dfrac{(4.136\times10^{-15})(3\times10^{10})}{0.16}=7.755\times10^{-4}\ \text{cm}=\boxed{7755\ \text{nm}\ (7.76\ \mu\text{m})}\ \ (\text{mid-infrared})$$

If the formula sheet's printed h = 4.375×10-15 eV·s is used instead, both wavelengths scale by 4.375/4.136 = 1.058, giving 1442 nm for (a) and 8203 nm for (b); the transition energies and their assignment are unchanged.

5.2 — Alumina multilayer capacitor sizing

Given. Sheet dimensions 1.5 cm × 1.5 cm × 0.001 cm; K = 6.5; ε0 = 8.85×10-14 F/cm; target capacitance C = 0.0142 µF.

Find. The number of sheets N needed.

Approach. A multilayer capacitor stacks sheets between alternating electrodes, so each sheet forms its own parallel-plate capacitor and the stack behaves as N identical capacitors connected in parallel: Ctotal = N·C1.

  1. Single-sheet capacitance. Sheet area A = 1.5 × 1.5 = 2.25 cm², thickness d = 0.001 cm: $$C_1=\dfrac{\varepsilon_0 K A}{d}=\dfrac{(8.85\times10^{-14})(6.5)(2.25)}{0.001}=1.294\times10^{-9}\ \text{F}=1.294\ \text{nF}$$
  2. Sheets required. $$N=\dfrac{C}{C_1}=\dfrac{1.42\times10^{-8}}{1.294\times10^{-9}}=10.97\ \Rightarrow\ \boxed{N=11\ \text{sheets}}$$ (rounded up, since a fractional sheet cannot be built and 10 sheets would fall short of the target). This is the formula sheet's multilayer form C = Aε0κ(n−1)/d read with n = number of electrode plates: n−1 = 10.97 → 11 alumina sheets interleaved between 12 plates.
Final results — Question 5
QuantityValue
5.1(a) CB → acceptor-band photon wavelength1364 nm
5.1(b) Acceptor-band → VB photon wavelength7755 nm (7.76 µm)
5.2 Single-sheet capacitance1.294 nF
5.2 Number of Al2O3 sheets required11