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17-Phys-B7 Structure of Materials · December 2016

Question 2 of 7: Bonding

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

Paper format. 98-Phys-B7 Structure of Materials, National Examination December 2016 — a closed-book examination (Casio or Sharp approved calculators only; all necessary equations, constants, the error-function table and the Cu–Ag phase diagram are supplied in the paper's own appendix). Candidates attempt any five of the seven questions, each worth 20 marks; every question is nonetheless answered in full below so the paper remains a complete study resource. This sitting numbers its questions with Roman numerals (Question I–VII) while sub-items inside each question use Arabic numerals (1., 2., 3.).

Reference texts. W. D. Callister Jr. & D. G. Rethwisch, Materials Science and Engineering: An Introduction, 10th ed. (atomic bonding, crystal structure and packing, point defects, diffusion, dislocations and slip, mechanical properties, phase diagrams and the lever rule, X-ray diffraction); D. J. Griffiths, Introduction to Quantum Mechanics, 3rd ed. (Bohr model, de Broglie wavelength, Heisenberg uncertainty).

Question II: Bonding (20 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Part 1 — Given. $E(r)=-\dfrac{A}{r^m}+\dfrac{B}{r^n}$, with $n>m>0$ (the $1/r^m$ term is the long-range attraction, $1/r^n$ the short-range repulsion).

Find. $F(r)$, the equilibrium spacing $r_0$, the maximum binding energy $E(r_0)$, and qualitative $E$–$r$/$F$–$r$ sketches.

Approach. Force is the negative gradient of potential energy, $F=-dE/dr$; equilibrium is where $F=0$; the binding energy is $E$ evaluated at that equilibrium spacing.

  1. Force–spacing relation. $$F(r)=-\frac{dE}{dr}=-\left(\frac{mA}{r^{m+1}}-\frac{nB}{r^{n+1}}\right) =\boxed{\frac{nB}{r^{n+1}}-\frac{mA}{r^{m+1}}}.$$ The first (repulsive, positive) term dominates at small $r$; the second (attractive, negative) term dominates at large $r$.
  2. Equilibrium spacing. Setting $F(r_0)=0$: $\dfrac{nB}{r_0^{n+1}} =\dfrac{mA}{r_0^{m+1}}\ \Rightarrow\ r_0^{\,n-m}=\dfrac{nB}{mA}$, so $$r_0=\boxed{\left(\frac{nB}{mA}\right)^{1/(n-m)}}.$$
  3. Maximum binding energy. From the equilibrium condition, $B=\dfrac{mA}{n}\, r_0^{\,n-m}$; substituting into $E(r_0)$ eliminates $B$: $$E(r_0)=-\frac{A}{r_0^m}+\frac{B}{r_0^n}=-\frac{A}{r_0^m}\left(1-\frac{m}{n}\right) =\boxed{-\frac{A}{r_0^{\,m}}\cdot\frac{n-m}{n}}.$$ This is negative (a bound, attractive minimum) since $n>m>0$; its magnitude is the maximum binding energy $E_0$.
r E, F E(r) F(r) r₀ E₀ (max binding energy)
Qualitative $E$–$r$ (red) and $F$–$r$ (blue) curves. $F=0$ and $E$ is a minimum at the same spacing $r_0$; for $r<r_0$ the net force is repulsive (positive), for $r>r_0$ it is attractive (negative).

Part 2. Dominant bonding type by material:

MaterialDominant bond type
(a) SiCovalent (diamond-cubic network, $sp^3$ hybrid bonds)
(b) GraphiteCovalent in-plane ($sp^2$ hexagonal sheets); weak van der Waals bonding between sheets
(c) NaClIonic ($\text{Na}^+/\text{Cl}^-$ electrostatic attraction)
(d) SiO$_2$Covalent network (Si–O bonds have partial ionic character from the electronegativity difference, but the tetrahedral network is predominantly covalent)
(e) ZrMetallic (delocalized valence electrons, HCP metal)

Part 3 — Given. $\text{Br}^{-1}$, $Z=35$ (neutral Br), so the anion has $35+1=36$ electrons—the same electron count as krypton.

Find. The four quantum numbers, and one valid set for the valence electron of $\text{Br}^{-1}$.

The four quantum numbers that uniquely specify an electron's state are the principal quantum number $n=1,2,3,\dots$ (principal energy level), the orbital (azimuthal) quantum number $\ell=0,1,\dots,n-1$ (orbital-type shape), the magnetic quantum number $m_\ell=-\ell,\dots,+\ell$ (orbital orientation), and the spin quantum number $m_s=\pm1/2$.

Br ($Z=35$) is $[\text{Ar}]\,3d^{10}\,4s^2\,4p^5$; gaining one electron to form $\text{Br}^{-1}$ fills the $4p$ sub-level completely: $[\text{Ar}]\,3d^{10}\,4s^2\,4p^6$ (isoelectronic with Kr). Every valence electron therefore sits in the full $4p^6$ sub-level, $n=4,\ \ell=1$; one valid combination for a specific electron in that sub-level is $$\boxed{n=4,\ \ell=1,\ m_\ell=0,\ m_s=+\tfrac12}$$ (any of the six $(m_\ell,m_s)$ pairs $m_\ell\in\{-1,0,+1\}$, $m_s=\pm1/2$ is an equally valid answer, since all six $4p$ states are occupied).

Final results — Question II
QuantityValue
$F(r)$$nB/r^{n+1}-mA/r^{m+1}$
$r_0$$(nB/mA)^{1/(n-m)}$
$E(r_0)$$-\dfrac{A}{r_0^m}\cdot\dfrac{n-m}{n}$
Si / Graphite / NaCl / SiO$_2$ / Zr bonding Covalent / covalent+vdW / ionic / covalent(-ionic) / metallic
$\text{Br}^{-1}$ valence electron$n=4,\ell=1,m_\ell=0,m_s=+1/2$