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22-Elec-A5 Electronics · December 2015

Question 4 of 5: Common-Gate MOSFET Amplifier

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

Paper format: National Exams, 07-Elec-A5 Electronics, December 2015 — closed book, non-communicating calculator permitted, 3 hours. Answer all FIVE questions (20 marks each). In schematics ground and chassis are common; op-amps are ideal and supplies are ±15 V unless a question states otherwise.

Reference texts: A. S. Sedra & K. C. Smith, Microelectronic Circuits, 8th ed. (diode wave-shaping & limiters Ch. 4; MOSFET amplifiers Ch. 7; BJT amplifiers Ch. 6–7; op-amp applications Ch. 2).

Question 4: Common-Gate MOSFET Amplifier (20 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Given. A common-gate stage: R1/R2 bias the gate (AC-grounded), the input drives the source through C1, the drain load is RD, and the drain bias current is set by Ibias so ID = 1 mA.

Given data
QuantityValue
VTH1 V
K1 mA/V2
λ0.1 V−1
ID = Ibias1 mA
RD5 kΩ

Find. (a) Av = vo/vin; (b) Rin looking into the source; (c) Ro looking into the drain.

+VCCR1R2RDM1IbiasC1vin+−RinC2vo+−Ro
Figure 4.1 — Common-gate stage. Gate held at AC ground by R1∥R2; signal enters the source (Rin), output taken at the drain across RD (Ro). Ibias is an ideal current source.

Approach. Get the operating point from ID = 1 mA to find gm and ro, then apply the standard common-gate small-signal formulas (gate at AC ground, input at source, output at drain).

  1. Overdrive and transconductance. From $I_D=\tfrac12 K V_{ov}^2$, the overdrive is $V_{ov}=\sqrt{2I_D/K}=\sqrt{2(1)/1}=1.414$ V, and
    $$g_m=\sqrt{2K I_D}=\sqrt{2(1\,\text{mA/V}^2)(1\,\text{mA})}=1.414\ \text{mA/V}.$$
  2. Output resistance of the device.
    $$r_o=\frac{1}{\lambda I_D}=\frac{1}{(0.1)(1\,\text{mA})}=10\ \text{k}\Omega.$$
    Because $r_o$ is comparable to RD, it must be kept in all three results.
  3. (a) Small-signal gain. For the common-gate stage (non-inverting),
    $$A_v=\frac{v_o}{v_{in}}=(g_m r_o+1)\,\frac{R_D}{R_D+r_o}=(1.414\times10+1)\,\frac{5}{5+10}.$$
    With $g_m r_o=14.14$,
    $$\boxed{A_v=(15.14)(0.3333)=+5.05\ \text{V/V}.}$$
  4. (b) Input resistance (into the source).
    $$R_{in}=\frac{r_o+R_D}{1+g_m r_o}=\frac{10+5}{1+14.14}\ \text{k}\Omega\ \Rightarrow\ \boxed{R_{in}=0.99\ \text{k}\Omega\ (991\ \Omega).}$$
    This is close to $1/g_m=707\ \Omega$, raised by the $R_D/(g_m r_o)$ term because $r_o$ is finite.
  5. (c) Output resistance (into the drain). With the ideal input source setting the source terminal at AC ground, the resistance looking into the drain is just ro, in parallel with the drain load:
    $$R_o=R_D\,\|\,r_o=5\,\|\,10=\boxed{3.33\ \text{k}\Omega.}$$
Question 4 — results
QuantityValue
gm1.414 mA/V
ro10 kΩ
(a) Av+5.05 V/V
(b) Rin0.99 kΩ (≈991 Ω)
(c) Ro3.33 kΩ