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22-Elec-B5 Advanced Electronics · December 2016

Question 2 of 5: Bias Design and Small-Signal Performance of an NMOS Cascode

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

07-Elec-B5 — Advanced Electronics — National Exams, December 2016 · 3 hours · CLOSED BOOK, any non-communicating calculator permitted · five questions, all to be answered, 20 marks each (100 marks total). Op-amps ideal and supplies ±15 V unless a question states otherwise; in schematics ground and chassis are common.

Reference texts for this subject:

  • A. S. Sedra & K. C. Smith, Microelectronic Circuits, 7th/8th ed. — Ch. 6–7 (BJT and MOS amplifier stages), Ch. 8 (cascodes and IC building blocks), Ch. 10 (frequency response), Ch. 11 (feedback, stability and frequency compensation), Ch. 12 (output stages and power amplifiers).
  • B. Razavi, Design of Analog CMOS Integrated Circuits, 2nd ed. — Ch. 3 (single-stage amplifiers and the cascode), Ch. 10 (stability and frequency compensation).
  • P. R. Gray, P. J. Hurst, S. H. Lewis & R. G. Meyer, Analysis and Design of Analog Integrated Circuits, 5th ed. — Ch. 8 (feedback) and Ch. 9 (frequency response and compensation).
  • B. Razavi, Fundamentals of Microelectronics, 2nd ed. — the worked-example convention (including \(V_T = 26\) mV) used by several questions in this subject's paper series.

Question 2: Bias Design and Small-Signal Performance of an NMOS Cascode (20 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Given. A cascode: \(M_1\) is the common-source device (gate at \(V_{G1}\), source through \(R_S\) to \(-V_{SS}\) with an infinite bypass capacitor), and \(M_2\) is the common-gate device stacked on top of it, its gate held at \(V_{G2}\) and bypassed to ground. The chain \(R_1,R_2,R_3\) runs from \(+V_{DD}\) to ground and taps off both gate voltages.

QuantitySymbolValue
Threshold voltage\(V_{TH}\)1.2 V
Transconductance parameter\(K\)0.8 mA/V\(^2\)
Channel-length modulation\(\lambda\)0 (so \(r_o=\infty\))
Supplies\(V_{DD},\ V_{SS}\)5 V, 5 V
Target drain current\(I_{DS1}=I_{DS2}\)0.4 mA
Target drain–source voltages\(V_{DS1}=V_{DS2}\)2.5 V
Source resistor\(R_S\)10 kΩ
Bias chain total\(R_1+R_2+R_3\)300 kΩ
Load\(R_L\)2 kΩ

Find. The four bias resistors \(R_D,R_1,R_2,R_3\) that place the stage at the stated operating point, then \(v_{out}/v_{in}\), \(R_{in}\) and \(R_{out}\).

vIN ∞Rin VG1 R3 R2 VG2 R1 +VDD ∞M2M1VS2 VS1 RS −VSS ∞RD +VDD vOUT Rout
Question 2. NMOS cascode. The bias chain R1-R2-R3 sets both gate voltages; the source of M1 is bypassed, so v_gs1 = v_in.
Check: the drain resistor is drawn as \(R_D\) but is not given a value, while the Given list supplies an \(R_L=2\ \text{k}\Omega\) that appears nowhere in the schematic. The only self-consistent reading is that \(R_D\) is part of the design (it must be 2.5 kΩ to make \(V_{DS2}=2.5\ \text{V}\) with \(R_S=10\ \text{k}\Omega\) given) and that \(R_L\) is an external ac load hung on \(v_{OUT}\). Both the loaded and the unloaded gain are quoted below so either marking scheme is served.

Approach. Work the dc design from the bottom up — the source resistor fixes \(V_{S1}\), the square-law equation fixes the overdrive and hence every gate-to-source drop, and the two 2.5 V targets stack the remaining node voltages — then apply the small-signal model, remembering that \(\lambda=0\) makes the cascode device transparent to the gain.

  1. Part (a) — get the overdrive from the square law. Both devices carry the same current because they are in series, so \[I_D=\tfrac{1}{2}K\,V_{OV}^{2}\ \Rightarrow\ V_{OV}=\sqrt{\frac{2I_D}{K}}=\sqrt{\frac{2(0.4\ \text{mA})}{0.8\ \text{mA/V}^2}}=1.00\ \text{V},\] \[\boxed{V_{GS1}=V_{GS2}=V_{TH}+V_{OV}=1.2+1.0=2.2\ \text{V}}\] The overdrive is the same for both devices only because they carry equal current and are identically sized; that is what allows the node voltages to be stacked mechanically in the next step.
  2. Walk up the stack to fix every node voltage. The source resistor carries the whole drain current: \[V_{S1}=-V_{SS}+I_DR_S=-5+(0.4\ \text{mA})(10\ \text{k}\Omega)=-1.00\ \text{V}.\] Adding \(V_{GS1}\) gives the lower gate, adding \(V_{DS1}\) gives the intermediate node, and so on: \[V_{G1}=-1.0+2.2=1.20\ \text{V},\qquad V_{D1}=V_{S2}=-1.0+2.5=1.50\ \text{V},\] \[V_{G2}=1.5+2.2=3.70\ \text{V},\qquad V_{D2}=1.5+2.5=4.00\ \text{V}.\] Each device has \(V_{DS}=2.5\ \text{V}\) against an overdrive of 1.0 V, so both are 1.5 V clear of the triode boundary.
  3. Size the drain resistor. The drop across \(R_D\) is whatever is left between the positive rail and the output node: \[R_D=\frac{V_{DD}-V_{D2}}{I_D}=\frac{5-4.00}{0.4\ \text{mA}}=\boxed{2.50\ \text{k}\Omega}\]
  4. Split the 300 kΩ bias chain. The chain runs from \(+V_{DD}\) to ground and the gates draw no current, so a single current flows through all three resistors: \[I_{div}=\frac{V_{DD}}{R_1+R_2+R_3}=\frac{5\ \text{V}}{300\ \text{k}\Omega}=16.67\ \mu\text{A}.\] Each resistor is then simply its required voltage divided by that current: \[R_3=\frac{V_{G1}}{I_{div}}=\frac{1.20}{16.67\ \mu\text{A}}=72\ \text{k}\Omega,\quad R_2=\frac{V_{G2}-V_{G1}}{I_{div}}=\frac{2.50}{16.67\ \mu\text{A}}=150\ \text{k}\Omega,\] \[R_1=\frac{V_{DD}-V_{G2}}{I_{div}}=\frac{1.30}{16.67\ \mu\text{A}}=78\ \text{k}\Omega.\] \[\boxed{R_1=78\ \text{k}\Omega,\quad R_2=150\ \text{k}\Omega,\quad R_3=72\ \text{k}\Omega,\quad R_D=2.5\ \text{k}\Omega}\] The three values sum to exactly 300 kΩ, which is the arithmetic check the question builds in.
  5. Part (b) — transconductance at the design point. Differentiating the square law, \[g_m=K\,V_{OV}=\frac{2I_D}{V_{OV}}=0.8\ \text{mA/V}.\] Both forms agree, which is a quick guard against having mixed up \(K\) with \(k'W/L\) conventions.
  6. Voltage gain. The source of \(M_1\) is bypassed, so \(v_{gs1}=v_{in}\); the signal current \(g_mv_{in}\) passes straight through the cascode device into the drain node. With \(\lambda=0\) the resistance looking into \(M_2\)'s drain is infinite, so the only load is \(R_D\) in parallel with the external \(R_L\): \[A_v=\frac{v_{out}}{v_{in}}=-g_m\left(R_D\parallel R_L\right)=-0.8\ \text{mA/V}\times\left(2.5\parallel 2\right)\text{k}\Omega=-0.8\times 1.111,\] \[\boxed{A_v=-0.889\ \text{V/V}\ \ (\text{unloaded: } -g_mR_D=-2.00\ \text{V/V})}\] The cascode buys nothing in gain here — that is the lesson of the \(\lambda=0\) assumption. Its value is in the output resistance and in shielding \(M_1\)'s drain from the output swing, and a real device with a finite \(r_o\) would show that immediately.
  7. Input resistance. Looking right from the source through the coupling capacitor, the gate itself draws nothing; \(R_3\) goes to ground and \(R_2\) goes to \(V_{G2}\), which is an ac ground because of its own bypass capacitor. \(R_1\) returns to the supply and so plays no ac part: \[R_{in}=R_2\parallel R_3=\frac{150\times 72}{150+72}=\boxed{48.6\ \text{k}\Omega}\]
  8. Output resistance. With \(\lambda=0\) the cascode presents an open circuit at its drain, so \[R_{out}=R_D\parallel r_{o,\text{cascode}}=R_D\parallel\infty=\boxed{2.50\ \text{k}\Omega}\] In a real cascode this term would be roughly \(g_{m2}r_{o2}r_{o1}\) — megohms — and would still leave \(R_D\) in charge, which is exactly why cascodes are used with active loads rather than resistive ones.
ResultSymbolValue
Overdrive / gate drive\(V_{OV},\ V_{GS}\)1.00 V, 2.20 V
Source, gate, intermediate and output nodes\(V_{S1},V_{G1},V_{S2},V_{G2},V_{D2}\)\(-1.00,\ 1.20,\ 1.50,\ 3.70,\ 4.00\) V
Drain resistor\(R_D\)2.50 kΩ
Bias chain\(R_1,\ R_2,\ R_3\)78 kΩ, 150 kΩ, 72 kΩ (sum 300 kΩ)
Transconductance\(g_m\)0.80 mA/V
Voltage gain (with \(R_L\) / unloaded)\(v_{out}/v_{in}\)\(-0.889\) / \(-2.00\) V/V
Input resistance\(R_{in}\)48.6 kΩ
Output resistance\(R_{out}\)2.50 kΩ