Question 2 of 7: NMOS Common-Source Amplifier with Diode-Connected Load
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Notes on this paper
98-Comp-A1, Electronics — National Exams, December 2015. Open-book, 3 hours; seven 20-mark questions, five to be marked (all seven answered below as a complete study resource, per the standing "answer all M" rule). Unless stated otherwise, diode drops $V_D=0.7\text{V}$.
Reference texts: Sedra & Smith, Microelectronic Circuits (diode limiters/rectifiers/clampers, MOSFET/BJT small-signal amplifiers, active loads and current mirrors, active-RC filters, differential pairs with current-mirror loads, op-amp astable multivibrators, CMOS inverter design and delay, clocked cross-coupled latches, current-steering DACs) — the single reference text covering every question on this paper.
Question 2: NMOS Common-Source Amplifier with Diode-Connected Load (20 marks)
Find. $I_{D1}$ and $V_o$ at $V_i=2\text{V}$; small-signal equivalent circuit; small-signal AC gain $v_o/v_i$.
Approach. $Q_1$ (gate driven directly by $V_i$, source grounded) sets the stack current from its own saturation equation; $Q_2$ (diode-connected, so always saturated) must carry that same current since the two devices are in series with nothing else at the shared node, which pins $V_o$. Linearise both around this point for the small-signal gain, recognising $Q_2$'s diode connection turns it into a resistive load of value $1/g_{m2}\|r_{o2}$.
Part (a) — $I_{D1}$. $Q_1$: $V_{GS1}=V_i=2\text{V}$, so $V_{ov1}=V_{GS1}-V_{tn}=1\text{V}$ (saturation, confirmed once $V_o$ is found below).
$$I_{D1}=\tfrac12 k_n V_{ov1}^2=\tfrac12(10\text{mA/V}^2)(1)^2=\boxed{5\text{ mA}}$$
Part (b) — $V_o$. $Q_2$ is diode-connected ($V_{GS2}=V_{DD}-V_o$, $V_{DS2}=V_{GS2}$, always saturated) and carries the same $5\text{mA}$ (single series current path):
$$5\text{mA}=\tfrac12(10)(V_{DD}-V_o-1)^2\ \Rightarrow\ (V_{DD}-V_o-1)^2=1\ \Rightarrow\ V_{DD}-V_o-1=+1$$
$$V_o=V_{DD}-2=\boxed{3\text{ V}}$$
Check: $V_{DS1}=V_o=3\text{V}\ge V_{ov1}=1\text{V}$ — $Q_1$ saturated as assumed.
Fig. Q2(c) — small-signal model. $Q_1$'s dependent source $g_{m1}v_i$ drives the parallel combination of both output resistances and $Q_2$'s diode-connected resistance $1/g_{m2}$ (since $Q_2$'s own drain-gate tie forces $v_{gs2}=-v_o$, making it look purely resistive).
Part (d) — small-signal gain. $g_{m1}=g_{m2}=k_nV_{ov}=(10\text{mA/V}^2)(1\text{V})=10\text{ mA/V}$ (identical devices, identical $5\text{mA}$, identical $1\text{V}$ overdrive — $Q_2$'s overdrive is $V_{DD}-V_o-V_{tn}=1\text{V}$, matching $Q_1$'s). $r_{o1}=r_{o2}=|V_A|/I_D=100/5\text{mA}=20\text{k}\Omega$. The load seen at $v_o$ is $r_{o1}\|r_{o2}\|(1/g_{m2})$:
$$R_L=\left(\frac{1}{20\text{k}}+\frac{1}{20\text{k}}+g_{m2}\right)^{-1}=99.0\,\Omega$$
$$A_v=\frac{v_o}{v_i}=-g_{m1}R_L=-(10\text{mA/V})(99.0\,\Omega)=\boxed{-0.990\text{ V/V}}$$
Close to the simple $-g_{m1}/g_{m2}=-1$ estimate (identical devices), reduced slightly by the two $r_o$'s loading the diode-connected resistance.