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22-Elec-A5 Electronics · December 2013

Question 4 of 6: Common-Gate MOSFET Amplifier

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

Paper format. National Exams — 07-Elec-A5 Electronics, December 2013. Closed book; non-communicating calculator permitted. Six questions of 20 marks; any five constitute a complete paper — all six are solved here as a study resource. Op-amps ideal with ±15 V supplies unless stated; diode forward drop as given per question.

Reference texts. A. Sedra & K. Smith, Microelectronic Circuits, 7th ed. (Oxford) — MOS/BJT amplifiers (ch. 7–9), diode wave-shaping (ch. 4), op-amp circuits (ch. 2), CMOS logic (ch. 14). Cross-checks from C. Sadiku, Fundamentals of Electric Circuits.

Check / source notes. All 16 schematics follow the printed drawings; diode orientations are as drawn (Q5 a/b/d, Q6 b). Q2's data block is internally inconsistent (it labels the BJT NPN yet lists VEB(on), names an RL that is not in the drawing, and gives RE = 1 kΩ while part (a) asks you to size RE); assumptions used to resolve these are stated in Q2 per the exam's "state any assumptions" instruction.

Question 4: Common-Gate MOSFET Amplifier (20 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Given.

VTHKλVDDIbias=IDR1/R2RD
1 V1 mA/V²0.1 V−110 V2 mA10 k / 5 k2 kΩ

Find. Small-signal voltage gain (source input, drain output), input resistance at the source, output resistance at the drain.

+VCC (10 V)R1R2M1RDC2voRoIbC1vinRin
Figure 5. Common-gate stage: gate AC-grounded by the R1/R2 divider, input at the source (fed by the ideal Ibias source), output at the drain.

Approach. The ideal current source sets ID=2 mA directly. Find the overdrive and hence gm and ro, then apply the common-gate small-signal formulas.

  1. Operating point. The current source fixes $I_D=2$ mA. Neglecting λ for the bias, $\tfrac12 K\,V_{ov}^2=I_D\Rightarrow V_{ov}=\sqrt{2I_D/K}=\sqrt{2\cdot2/1}=2\text{ V}.$
  2. Transconductance and output resistance. $$g_m=K\,V_{ov}=1\text{ mA/V}^2\times2\text{ V}=2\text{ mS},\qquad r_o=\frac{1}{\lambda I_D}=\frac{1}{0.1\times2\text{ mA}}=5\text{ k}\Omega.$$
  3. Voltage gain, ro included (part a). For the common-gate stage (input at source, output at drain, drain load RD): $$\frac{v_o}{v_{in}}=\Big(g_m+\tfrac1{r_o}\Big)(R_D\parallel r_o)=(2.2\text{ mS})(2\text{k}\parallel5\text{k})=(2.2\text{ mS})(1.43\text{ k}\Omega)=\boxed{+3.14}.$$ The gain is positive — the common-gate stage is non-inverting.
  4. Input resistance at the source (part b). Looking into the source with RD as the drain load, $$R_{in}=\frac{R_D+r_o}{1+g_m r_o}=\frac{2\text{k}+5\text{k}}{1+(2\text{ mS})(5\text{k})}=\frac{7\text{k}}{11}=\boxed{636\ \Omega}.$$ (The ideal Ibias adds no shunt, so this is the amplifier input resistance; it is low, the signature of a common-gate/current-buffer input.)
  5. Output resistance at the drain (part c). The source is degenerated by the ideal current source (infinite resistance), which boosts the drain resistance of M1 to essentially infinity; it therefore drops out and $$R_o=R_D\parallel\big[r_o(1+g_mR_{source})\big]\Big|_{R_{source}\to\infty}=R_D=\boxed{2\text{ k}\Omega}.$$
Check (second-order λ effect). Retaining (1+λvDS) in the bias lowers Vov to ≈1.62 V and raises gm to ≈2.5 mS (gain ≈3.8, Rin≈524 Ω). The standard practice — ignore λ for bias, keep ro for small signal — is used for the boxed answers.
Q4 — results
QuantityValue
Vov / gm / ro2 V / 2 mS / 5 kΩ
Gain vo/vin+3.14 (non-inverting)
Rin (at source)636 Ω
Ro (at drain)2 kΩ