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22-Elec-A5 Electronics · May 2014

Question 4 of 5: BJT Gain Stage

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

National Exams — May 2014 · 07-Elec-A5, Electronics. Closed-book; non-communicating calculator permitted; 3 hours. Five questions, 20 marks each; op-amps ideal with ±15 V supplies unless stated. All five are solved below.

Reference texts: A. S. Sedra & K. C. Smith, Microelectronic Circuits, 7th/8th ed. (diodes & wave-shaping Ch. 4; MOS amplifiers Ch. 7; BJT amplifiers Ch. 6–7; op-amp imperfections Ch. 2); R. C. Jaeger & T. N. Blalock, Microelectronic Circuit Design.

Question 4: BJT Gain Stage (20 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Check / topology. The emitter is bypassed to ground by \(C_E\) and the output is taken from the collector node \(v_{C1}\) through \(C_C\) into \(R_L\). Electrically this is a common-emitter amplifier (a true common-collector follower cannot have a voltage gain of 100). The design below treats it as common-emitter, which is the only reading consistent with the stated gain of 100 V/V.

Given. \(\beta=100\), \(V_{BE}=0.7\ \text{V}\), \(V_A=\infty\;(r_o=\infty)\), \(R_S=100\ \Omega\), \(I_E=2\ \text{mA}\), open-circuit \(|A_v|=100\), \(R_L=1.25\ \text{k}\Omega\); thermal voltage \(V_T=25\ \text{mV}\).

Find. \(R_E,R_C\); output resistance \(R_O\); the two output waveforms.

+5 V−5 VQ1RCvC1C_Cv₀RLRovsRSIERECE
Q4 - The emitter is bypassed by C_E (a.c. ground) and the output is taken from the COLLECTOR via C_C into R_L: electrically a common-emitter amplifier.

Approach. With \(\beta\) large take \(I_C\approx I_E=2\ \text{mA}\); the transconductance sets \(R_C\) from the gain spec, and the emitter d.c. drop sets \(R_E\); then load the gain with \(R_L\) for part (c).

  1. Transconductance and \(R_C\) (part a). \(g_m=\dfrac{I_C}{V_T}=\dfrac{2\ \text{mA}}{25\ \text{mV}}=80\ \text{mA/V}\). The bypassed-emitter open-circuit gain is \(|A_v|=g_mR_C=100\), hence $$R_C=\frac{100}{g_m}=\frac{100}{0.08\ \text{S}}=\boxed{1.25\ \text{k}\Omega}.$$
  2. Emitter resistor from the d.c. bias. The base d.c. path is through \(R_S\) to ground, so \(V_B\approx-I_BR_S\approx0\) (\(I_B=I_C/\beta=20\ \mu\text{A}\Rightarrow V_B\approx-2\ \text{mV}\)). Then \(V_E=V_B-V_{BE}=-0.7\ \text{V}\), and \(R_E\) carries \(I_E\) to the \(-5\ \text{V}\) rail: $$R_E=\frac{V_E-(-5)}{I_E}=\frac{-0.7+5}{2\ \text{mA}}=\boxed{2.15\ \text{k}\Omega}.$$
  3. Output resistance (part b). The output looks back into the collector, where \(r_o=\infty\), so $$R_O=R_C\parallel r_o=R_C=\boxed{1.25\ \text{k}\Omega}.$$
  4. Loaded gain and waveforms (part c). With \(R_L=1.25\ \text{k}\Omega\) coupled to the collector, the a.c. load is \(R_C\parallel R_L=625\ \Omega\) and $$A_v=-g_m(R_C\parallel R_L)=-(0.08)(625)=-50\ \text{V/V}.$$ A 1 mV\(_{pp}\) input therefore gives \(v_o=50\ \text{mV}_{pp}\), inverted. The collector node carries the same 50 mV\(_{pp}\) sine riding on its d.c. level \(V_{C1}=+5-I_CR_C=+5-2.5=2.5\ \text{V}\); \(C_C\) removes the d.c. so \(v_o\) is centred on 0 V. Both are small, undistorted sinusoids.
t (ms)v122.50v_C1 (2.5 V dc + 50 mV pp)v_o (0 V dc + 50 mV pp)
Q4(c) - Both nodes carry the same 50 mV pp sine (inverted vs input); v_C1 rides on the 2.5 V collector d.c. level, v_o is centred on 0 V (amplitudes exaggerated for clarity).
Q4 results
QuantityValue
\(g_m\)80 mA/V
\(R_C\) (for \(|A_v|_{oc}=100\))1.25 kΩ
\(R_E\)2.15 kΩ
\(R_O=R_C\)1.25 kΩ
Loaded gain−50 V/V
\(v_o\) amplitude50 mV\(_{pp}\) (0 V d.c.)
\(v_{C1}\)50 mV\(_{pp}\) on +2.5 V d.c.