Question 5 of 5: BJT DC Bias — Solve for the Node Voltages
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Notes on this paper
National Exams — December 2018 · 16-Elec-A5, Electronics. Closed-book, 3 hours. Answer all FIVE (5) questions; each worth 20 marks. Unless otherwise stated, op-amps are ideal and supply rails are ±15 V; ground and chassis are common.
Reference texts: A. S. Sedra & K. C. Smith, Microelectronic Circuits, 8th ed. (Oxford) — Ch. 4 (diode circuits & rectifiers), Ch. 5–7 (MOSFET and BJT amplifiers, biasing and small-signal models), Ch. 13–14 (CMOS/enhancement-load inverters), Ch. 2 (ideal op-amps, offset and feedback). Cross-reference: R. C. Jaeger & T. N. Blalock, Microelectronic Circuit Design.
Question 5: BJT DC Bias — Solve for the Node Voltages (20 marks)
Find. the indicated node voltage in each of the five cells (a)–(e).
[Figure not reproduced: Q5(a)–(e): five BJT bias cells. (c) is a PNP with its base grounded; (d) biases the base through 5 kΩ to ground; (e) is a two-transistor feedback pair. See the official exam paper or the cited reference text.]
Q5(a)–(e): five BJT bias cells. (c) is a PNP with its base grounded; (d) biases the base through 5 kΩ to ground; (e) is a two-transistor feedback pair.
Approach. For each cell assume forward-active, solve, then check the region: an NPN needs $V_C\gt V_B$ and a PNP needs $V_C\lt V_B$ — if the active solution violates this, redo in saturation with $\lvert V_{CE}\rvert=0.3\text{ V}$.
(a) NPN, emitter grounded. $V_B=V_{BE}=0.6\text{ V}$, so $I_B=(2-0.6)/20\text{k}=0.07\text{ mA}$ and $I_C=\beta I_B=3.5\text{ mA}$. Then $$V_C=5-I_C(1\text{k})=5-3.5=\boxed{1.5\text{ V}}.$$ Active check: $V_C=1.5\gt V_B=0.6$. Valid.
(b) PNP, emitter to +5 V through 100 $\Omega$. An active solution demands $I_C\approx 7.9\text{ mA}$, i.e. $V_C\approx 7.9\text{ V}\gt V_E$ — impossible for a PNP, so the device saturates ($V_{EC}=0.3$, $V_C=V_E-0.3$). Writing KCL $I_E=I_B+I_C$ with the base fed through 10 kΩ to +2 V and the collector through 1 kΩ to ground gives $111\,V_E=505.6$, so $$V_E=\boxed{4.56\text{ V}}\quad(V_C=4.26\text{ V},\ V_B=3.96\text{ V}).$$ Saturation check: $I_C/I_B\approx 22\lt\beta$. Valid.
(c) PNP with base grounded. The base sits at 0 V, so a conducting emitter-base junction pins the emitter one $V_{EB}$ above it: $$V_E=0+V_{EB,on}=\boxed{+0.6\text{ V}},$$ independent of the 470 $\Omega$/1 kΩ loads. (The collector runs to $-5\text{ V}$, so the device is on; whether it is active or saturated does not change $V_E$.)
(d) NPN, base biased through 5 kΩ to ground. Assuming active gives $V_C\approx-2.86\text{ V}\lt V_B$, i.e. the collector-base junction is forward biased — the device saturates ($V_C=V_E+0.3=V_B-0.3$). KCL $I_E=I_B+I_C$ with $I_B=-V_B/5\text{k}$, $I_C=(5-V_C)/2\text{k}$, $I_E=(V_E+5)/1\text{k}$ gives $17\,V_B=-17.5$, hence $V_B=-1.03\text{ V}$ and $$V_C=V_B-0.3=\boxed{-1.33\text{ V}}.$$ Saturation check: $\beta I_B=10.3\text{ mA}\gt I_C=3.2\text{ mA}$. Valid.
(e) Two-NPN feedback pair. $Q_1$ has its emitter grounded, so its base sits at $V_{BE}=0.6\text{ V}$; $Q_2$’s base is the $V_{C1}$ node and its emitter drives $Q_1$’s base, so $V_{C1}=V_{BE,Q2}+V_{BE,Q1}$: $$V_{C1}=2\,V_{BE,on}=\boxed{1.2\text{ V}}.$$ The 2 kΩ then carries $(5-1.2)/2\text{k}=1.9\text{ mA}=I_{C1}$, consistent with $V_{C1}=5-1.9\text{ mA}\cdot2\text{k}=1.2\text{ V}$; both transistors are active.
Check: In cell (e) the direction of $Q_2$’s emitter arrow is ambiguous in the printed figure. Read as a two-NPN negative-feedback pair ($Q_2$ collector→$+5$ V via 100 $\Omega$, emitter→$Q_1$ base, base→$V_{C1}$; $Q_1$ collector→$V_{C1}$), the circuit has the unique stable bias $V_{C1}=2V_{BE}=1.2\text{ V}$. The alternative (PNP-$Q_2$) reading makes the pair a regenerative latch with no unique DC operating point, confirming the two-NPN interpretation.