Question 3 of 5: Tuned amplifier with a gate tank — centre frequency, gain and bandwidth
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Notes on this paper
Paper format. National Exams, December 2015 — 07-Elec-B5
Advanced Electronics. Three hours, CLOSED BOOK; any non-communicating
calculator permitted. Answer all FIVE (5) questions; all questions
are worth 20 marks each. In schematics ground and chassis are common; op-amps are
ideal and supplies are ±15 V unless stated otherwise. Candidates are urged to
state any interpretation assumptions inside their answer — this solution does
so in the shaded Check callouts.
Reference texts.
A. S. Sedra & K. C. Smith, Microelectronic Circuits, 8th ed. —
Ch. 4 (diodes / shunt and series regulators), Ch. 7 (transistor amplifiers),
Ch. 10 (frequency response, open-circuit time constants), Ch. 11 (feedback),
Ch. 12 (output stages), Ch. 17 (tuned amplifiers).
B. Razavi, Fundamentals of Microelectronics, 2nd ed. — Ch. 8
(bias and small-signal models), Ch. 11 (frequency response, Miller's theorem),
Ch. 12 (feedback topologies).
P. R. Gray, P. J. Hurst, S. H. Lewis & R. G. Meyer, Analysis and Design
of Analog Integrated Circuits, 5th ed. — Ch. 7 (frequency response),
Ch. 8 (feedback).
C. K. Alexander & M. N. O. Sadiku, Fundamentals of Electric Circuits,
7th ed. — Ch. 14 (resonance, bandwidth and quality factor).
Check — how the figures were recovered. Every circuit on this paper carries data that exists only in the drawing (which
branch a component sits in, which transistor terminal the source drives). Where a drawing
is ambiguous or under-specified, the reading used is stated explicitly in a
Check callout inside that question rather than being buried in the
arithmetic.
Question 3: Tuned amplifier with a gate tank — centre frequency, gain and bandwidth (20 marks)
Find. The centre (resonant) frequency ωo of the tuned
stage, the voltage gain vOUT/vS at that frequency, and the 3 dB
bandwidth.
Q3 — tuned common-source stage. The L1–C1 tank sits at the GATE, in parallel to ground, and is driven from vS through RS; the drain carries a plain resistive load RL.
Check — which node carries the tank. This matters: the drain is broadband and it is the gate node that is
frequency-selective, so RS (not RL) sets the bandwidth. The device
capacitances Cgs and Cgd are given precisely because they land in
parallel with C1 and must be counted.
Approach. Bias the transistor to get gm, add the device
capacitances (Cgd after Miller multiplication) to C1 to form the
total tank capacitance, then use the standard parallel-RLC results: resonance where the
susceptances cancel, gain set by the drain load once the tank is open, and bandwidth
1/(RC) with R the resistance loading the tank.
Part (a) — Bias the transistor and get gm. With
$I_D=\tfrac12 K V_{OV}^2$ and ID = Ibias = 2 mA,
$$V_{OV}=\sqrt{\frac{2I_D}{K}}=\sqrt{\frac{2(2\ \text{mA})}{1\ \text{mA/V}^2}}=2.0\ \text{V},
\qquad V_{GS}=V_{TH}+V_{OV}=3.0\ \text{V}$$
$$g_m=KV_{OV}=\sqrt{2KI_D}=2.0\ \text{mA/V}$$
The drain sits at $V_D=V_{DD}-I_DR_L=10-4=6\ \text{V}$, well above
$V_{OV}$, so M1 is saturated as assumed.
Assemble the total tank capacitance. Cgs is already from
gate to (AC-grounded) source, so it adds directly. Cgd bridges the gate and a
drain that swings $-g_mR_L=-4$ times harder, so by Miller's theorem it appears at the
gate as
$$C_M=C_{gd}\left(1+g_mR_L\right)=1\ \text{pF}\,\bigl(1+(2\ \text{mA/V})(2\ \text{k}\Omega)\bigr)=5\ \text{pF}$$
$$C_{tot}=C_1+C_{gs}+C_M=200+10+5=215\ \text{pF}$$
Resonate the tank. At resonance the inductive and capacitive
susceptances cancel:
$$\boxed{\omega_o=\frac{1}{\sqrt{L_1C_{tot}}}
=\frac{1}{\sqrt{(1\ \mu\text{H})(215\ \text{pF})}}=6.82\times10^{7}\ \text{rad/s}}$$
which is $f_o=\omega_o/2\pi=10.85\ \text{MHz}$.
Part (b) — Take the gain at resonance. At ωo the
parallel L–C combination presents an infinite impedance, so no signal current flows
in RS and the whole source voltage appears at the gate,
$v_{gs}=v_S$. The drain then drives RL with ro = ∞:
$$\boxed{\left.\frac{v_{OUT}}{v_S}\right|_{\omega_o}=-g_mR_L
=-(2\ \text{mA/V})(2\ \text{k}\Omega)=-4.0\ \text{V/V}}$$
i.e. 12.0 dB with a 180° inversion. The drain node has its own pole at
$1/[2\pi R_L C_{gd}(1+1/g_mR_L)]=63.7\ \text{MHz}$, six times above ωo,
so it costs only 1.4 % of the magnitude and is neglected.
Part (c) — Find the bandwidth from the tank's loading. Replace the
source by its Norton equivalent, $i=v_S/R_S$ in parallel with RS: the gate node
is then a parallel RLC with R = RS. For such a circuit the 3 dB bandwidth is
independent of L and is fixed by the R–C product:
$$\boxed{\text{BW}=\frac{1}{R_SC_{tot}}=\frac{1}{(1\ \text{k}\Omega)(215\ \text{pF})}
=4.65\times10^{6}\ \text{rad/s}=740\ \text{kHz}}$$
The corresponding quality factor is
$$Q=\frac{\omega_o}{\text{BW}}=\frac{6.82\times10^{7}}{4.65\times10^{6}}=14.7
=R_S\sqrt{\frac{C_{tot}}{L_1}}$$
the two expressions agreeing exactly, which is the cheap arithmetic check on this
part.
Q3 — band-pass response of the gate tank (Q = 14.7). The gain peaks at −4.0 V/V at ωo = 6.82 × 107 rad/s and falls 3 dB at the edges of a 4.65 × 106 rad/s window.
Part
Quantity
Result
—
Bias point
VOV = 2.0 V, VGS = 3.0 V, gm = 2.0 mA/V
—
Total tank capacitance
Ctot = 200 + 10 + 5 = 215 pF
(a)
Centre frequency ωo
6.82 × 107 rad/s (10.85 MHz)
(b)
Gain at ωo
−4.0 V/V (12.0 dB, inverting)
(c)
3 dB bandwidth
4.65 × 106 rad/s (740 kHz)
(c)
Quality factor
Q = 14.7
Check — counting the device capacitances.
If Cgs and the Miller-multiplied Cgd are ignored and only
C1 = 200 pF is resonated, the answer to (a) becomes
$1/\sqrt{L_1C_1}=7.07\times10^{7}\ \text{rad/s}$ (11.25 MHz) and the bandwidth becomes
$5.0\times10^{6}\ \text{rad/s}$ — each about 7 % away from the values above.
The full count is used here because the paper supplies Cgs and Cgd
and they sit in parallel with the tank; a candidate who quotes the C1-only
figures should say so explicitly.