Question 1 of 5: Class-B push–pull output stage — load power, device dissipation and efficiency
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Notes on this paper
Paper format. National Exams, May 2016 — 07-Elec-B5
Advanced Electronics. Three hours, CLOSED BOOK; any non-communicating
calculator permitted. Answer all FIVE (5) questions; all questions
are worth 20 marks each. Ground and chassis are common in every schematic; op-amps
are ideal and supplies are ±15 V unless a question states otherwise.
Candidates are urged to state any interpretation assumption inside their answer
— this solution does so in the shaded Check callouts.
Reference texts.
A. S. Sedra & K. C. Smith, Microelectronic Circuits, 8th ed. —
Ch. 7 (transistor amplifiers and the small-signal models), Ch. 8 (current mirrors
and the cascode), Ch. 10 (frequency response, Miller's theorem, open-circuit time
constants), Ch. 11 (feedback topologies and the effect on port resistances),
Ch. 12 (class-A/B output stages), Ch. 17 (tuned amplifiers).
B. Razavi, Fundamentals of Microelectronics, 2nd ed. — Ch. 9
(cascode stages; Example 9.9, p. 405 is cited by name in Question 3),
Ch. 11 (frequency response), Ch. 12 (feedback).
P. R. Gray, P. J. Hurst, S. H. Lewis & R. G. Meyer, Analysis and Design
of Analog Integrated Circuits, 5th ed. — Ch. 3 (single-stage amplifiers),
Ch. 7 (frequency response), Ch. 8 (feedback).
C. K. Alexander & M. N. O. Sadiku, Fundamentals of Electric Circuits,
7th ed. — Ch. 14 (resonance, bandwidth and quality factor).
Check — how the schematics below were obtained. Every question on this paper carries load-bearing data that exists only in the
drawing (which branch a reactance sits in, which terminal a source drives, whether
a bypass capacitor is present). Where the drawing is under-specified, the
reading adopted is stated in a Check callout inside that question rather
than being buried in the arithmetic.
Find. The greatest sinusoidal power the stage can put into the
8 Ω load, the greatest average power that Q1 itself has to get rid of
(which is not at that same operating point), and the best conversion
efficiency the stage can reach.
[Figure not reproduced: Question 1 — complementary class-B push–pull output stage as drawn on the exam paper. Q 1 (npn) sources current into R L on the positive half cycle and Q 2 (pnp) sinks it on the negative half; D 1 –D 2 and the two bias sources set the quiescent point only. See the official exam paper.]
Load power PL, total supply power PS and the dissipation PD of one transistor, plotted against output amplitude for VCC = 10 V and RL = 8 Ω. Device dissipation peaks at 1.267 W when the amplitude is 2VCC/π = 6.37 V, not at full output.
Approach. Treat the stage as an ideal class-B pair — each
transistor is an emitter follower that conducts one half-cycle of a half-sine load
current — then evaluate the three standard half-cycle averages (load power,
device dissipation, supply power) as functions of the output amplitude
V̂o and maximise each one separately.
Part (a) — fix the largest usable output amplitude.
Q1 is an npn emitter follower fed from +VCC and
Q2 a pnp emitter follower fed from −VEE; the
diode string D1–D2 only sets the quiescent bias and
carries no signal current. The output therefore follows the input until the
conducting device saturates, so with VCE,sat neglected
$$\hat V_{o,\max} = V_{CC} = 10\ \text{V}.$$
Compute the maximum load power. For a sinusoid of amplitude
V̂o across RL the average power is
$P_L = \hat V_o^{\,2}/(2R_L)$. Substituting the amplitude found above,
$$P_{L,\max} = \frac{(10\ \text{V})^{2}}{2(8\ \Omega)} = \boxed{6.25\ \text{W}}$$
which answers part (a).
Part (b) — write the dissipation of one device as a function of
amplitude. Over the half cycle in which Q1 conducts, the
collector current is $i_C = (\hat V_o/R_L)\sin\theta$ and the voltage across the
device is $v_{CE} = V_{CC} - \hat V_o\sin\theta$. Averaging their product over the
full period (Q1 is off for the other half) gives
$$P_{D1} = \frac{1}{2\pi}\int_{0}^{\pi}\bigl(V_{CC}-\hat V_o\sin\theta\bigr)
\frac{\hat V_o\sin\theta}{R_L}\,d\theta
= \frac{V_{CC}\hat V_o}{\pi R_L} - \frac{\hat V_o^{\,2}}{4R_L}.$$
Maximise that expression over the output amplitude. Setting
$dP_{D1}/d\hat V_o = V_{CC}/(\pi R_L) - \hat V_o/(2R_L) = 0$ gives the amplitude at
which one transistor works hardest:
$$\hat V_o\big|_{P_{D}\max} = \frac{2V_{CC}}{\pi} = \frac{2(10)}{\pi} = 6.366\ \text{V}.$$
This is only 64 % of the rail, so the hottest operating point is a
partly driven stage, not a fully driven one — the red curve in the figure
above.
Evaluate the peak device dissipation. Substituting
$\hat V_o = 2V_{CC}/\pi$ back into the expression of step 3 collapses it to
$$P_{D1,\max} = \frac{V_{CC}^{\,2}}{\pi^{2}R_L}
= \frac{(10)^{2}}{\pi^{2}(8)} = \boxed{1.267\ \text{W}}$$
per transistor, which answers part (b). For comparison, at the full 10 V output of
part (a) each device dissipates only
$10(10)/(\pi\cdot 8) - 10^{2}/(4\cdot 8) = 0.854\ \text{W}$, so sizing the heatsink
from the maximum-output condition would under-rate it by about 48 %.
Part (c) — supply power and efficiency. Each supply
delivers the average of a half-sine of amplitude $\hat V_o/R_L$, so together the two
rails deliver $P_S = 2V_{CC}\hat V_o/(\pi R_L)$ and
$$\eta = \frac{P_L}{P_S}
= \frac{\hat V_o^{\,2}/(2R_L)}{2V_{CC}\hat V_o/(\pi R_L)}
= \frac{\pi}{4}\cdot\frac{\hat V_o}{V_{CC}}.$$
Efficiency rises linearly with drive, so it is greatest at the largest amplitude the
stage can produce.
Evaluate the maximum efficiency. Putting
$\hat V_o = V_{CC}$ into the result of step 6,
$$\eta_{\max} = \frac{\pi}{4} = \boxed{78.5\ \text{percent}}$$
which answers part (c). At that point the rails supply
$P_S = 2(10)(10)/(\pi\cdot 8) = 7.958\ \text{W}$ against 6.25 W in the load.
Cross-check the three results against a power balance. Whatever
the amplitude, $P_S = P_L + 2P_{D}$ must hold. At the worst-case amplitude
6.366 V: 5.066 W supplied, 2.533 W in the load and
$2 \times 1.267 = 2.533$ W in the devices. At full output: 7.958 W supplied,
6.250 W in the load and $2 \times 0.854 = 1.708$ W in the devices. Both balance
exactly, so the three answers are mutually consistent.
Final Results
Part
Quantity
Result
(a)
Maximum load power, PL,max
6.25 W (at V̂o = 10 V)
(b)
Amplitude giving worst-case device dissipation
V̂o = 2VCC/π = 6.37 V
(b)
Maximum dissipation in Q1, PD1,max
1.267 W (= VCC2/π2RL)
(c)
Maximum efficiency, ηmax
78.5 % (= π/4)
—
Supply power at full output, PS
7.96 W
—
Dissipation per device at full output
0.854 W
Check — assumptions carried into the numbers.
(i) The paper gives no saturation voltage, so VCE,sat is taken as zero and
the peak output equals the rail. If a realistic VCE,sat = 0.3 V were
allowed, V̂o would fall to 9.7 V, giving PL,max = 5.88 W and
ηmax = 76.2 %; the part (b) answer is unchanged because
6.37 V is well inside the linear range either way. (ii) The diodes and the two bias
current sources are explicitly excluded from the power accounting by the question, so
η here is the output-stage efficiency, not the efficiency of the whole
amplifier. (iii) "Negligible current around VIN = 0" is what makes this a
class-B rather than a class-AB calculation; a real D1/D2-biased
stage carries a small quiescent IQ that adds 2VCCIQ
of standing dissipation and slightly lowers η.