NivaarExam PrepOfficial exam papers ↗

22-Elec-B5 Advanced Electronics · May 2016

Question 1 of 5: Class-B push–pull output stage — load power, device dissipation and efficiency

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

Paper format. National Exams, May 2016 — 07-Elec-B5 Advanced Electronics. Three hours, CLOSED BOOK; any non-communicating calculator permitted. Answer all FIVE (5) questions; all questions are worth 20 marks each. Ground and chassis are common in every schematic; op-amps are ideal and supplies are ±15 V unless a question states otherwise. Candidates are urged to state any interpretation assumption inside their answer — this solution does so in the shaded Check callouts.

Reference texts.

Check — how the schematics below were obtained. Every question on this paper carries load-bearing data that exists only in the drawing (which branch a reactance sits in, which terminal a source drives, whether a bypass capacitor is present). Where the drawing is under-specified, the reading adopted is stated in a Check callout inside that question rather than being buried in the arithmetic.

Question 1: Class-B push–pull output stage — load power, device dissipation and efficiency (20 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Given.

QuantitySymbolValue
Positive supplyVCC10 V
Negative supply|VEE|10 V
Load resistanceRL8 Ω
Output waveformvOUTsinusoidal, amplitude V̂o
Quiescent device currentIQnegligible (class B)
Base currents, bias sourcesIB, I1, I2neglected

Find. The greatest sinusoidal power the stage can put into the 8 Ω load, the greatest average power that Q1 itself has to get rid of (which is not at that same operating point), and the best conversion efficiency the stage can reach.

[Figure not reproduced: Question 1 — complementary class-B push–pull output stage as drawn on the exam paper. Q 1 (npn) sources current into R L on the positive half cycle and Q 2 (pnp) sinks it on the negative half; D 1 –D 2 and the two bias sources set the quiescent point only. See the official exam paper.]

2.557.5101.563.124.696.25peak output amplitude (V)power (W)peak at 2VCC/πPLPD (each)PS
Load power PL, total supply power PS and the dissipation PD of one transistor, plotted against output amplitude for VCC = 10 V and RL = 8 Ω. Device dissipation peaks at 1.267 W when the amplitude is 2VCC/π = 6.37 V, not at full output.

Approach. Treat the stage as an ideal class-B pair — each transistor is an emitter follower that conducts one half-cycle of a half-sine load current — then evaluate the three standard half-cycle averages (load power, device dissipation, supply power) as functions of the output amplitude V̂o and maximise each one separately.

  1. Part (a) — fix the largest usable output amplitude. Q1 is an npn emitter follower fed from +VCC and Q2 a pnp emitter follower fed from −VEE; the diode string D1–D2 only sets the quiescent bias and carries no signal current. The output therefore follows the input until the conducting device saturates, so with VCE,sat neglected $$\hat V_{o,\max} = V_{CC} = 10\ \text{V}.$$
  2. Compute the maximum load power. For a sinusoid of amplitude V̂o across RL the average power is $P_L = \hat V_o^{\,2}/(2R_L)$. Substituting the amplitude found above, $$P_{L,\max} = \frac{(10\ \text{V})^{2}}{2(8\ \Omega)} = \boxed{6.25\ \text{W}}$$ which answers part (a).
  3. Part (b) — write the dissipation of one device as a function of amplitude. Over the half cycle in which Q1 conducts, the collector current is $i_C = (\hat V_o/R_L)\sin\theta$ and the voltage across the device is $v_{CE} = V_{CC} - \hat V_o\sin\theta$. Averaging their product over the full period (Q1 is off for the other half) gives $$P_{D1} = \frac{1}{2\pi}\int_{0}^{\pi}\bigl(V_{CC}-\hat V_o\sin\theta\bigr) \frac{\hat V_o\sin\theta}{R_L}\,d\theta = \frac{V_{CC}\hat V_o}{\pi R_L} - \frac{\hat V_o^{\,2}}{4R_L}.$$
  4. Maximise that expression over the output amplitude. Setting $dP_{D1}/d\hat V_o = V_{CC}/(\pi R_L) - \hat V_o/(2R_L) = 0$ gives the amplitude at which one transistor works hardest: $$\hat V_o\big|_{P_{D}\max} = \frac{2V_{CC}}{\pi} = \frac{2(10)}{\pi} = 6.366\ \text{V}.$$ This is only 64 % of the rail, so the hottest operating point is a partly driven stage, not a fully driven one — the red curve in the figure above.
  5. Evaluate the peak device dissipation. Substituting $\hat V_o = 2V_{CC}/\pi$ back into the expression of step 3 collapses it to $$P_{D1,\max} = \frac{V_{CC}^{\,2}}{\pi^{2}R_L} = \frac{(10)^{2}}{\pi^{2}(8)} = \boxed{1.267\ \text{W}}$$ per transistor, which answers part (b). For comparison, at the full 10 V output of part (a) each device dissipates only $10(10)/(\pi\cdot 8) - 10^{2}/(4\cdot 8) = 0.854\ \text{W}$, so sizing the heatsink from the maximum-output condition would under-rate it by about 48 %.
  6. Part (c) — supply power and efficiency. Each supply delivers the average of a half-sine of amplitude $\hat V_o/R_L$, so together the two rails deliver $P_S = 2V_{CC}\hat V_o/(\pi R_L)$ and $$\eta = \frac{P_L}{P_S} = \frac{\hat V_o^{\,2}/(2R_L)}{2V_{CC}\hat V_o/(\pi R_L)} = \frac{\pi}{4}\cdot\frac{\hat V_o}{V_{CC}}.$$ Efficiency rises linearly with drive, so it is greatest at the largest amplitude the stage can produce.
  7. Evaluate the maximum efficiency. Putting $\hat V_o = V_{CC}$ into the result of step 6, $$\eta_{\max} = \frac{\pi}{4} = \boxed{78.5\ \text{percent}}$$ which answers part (c). At that point the rails supply $P_S = 2(10)(10)/(\pi\cdot 8) = 7.958\ \text{W}$ against 6.25 W in the load.
  8. Cross-check the three results against a power balance. Whatever the amplitude, $P_S = P_L + 2P_{D}$ must hold. At the worst-case amplitude 6.366 V: 5.066 W supplied, 2.533 W in the load and $2 \times 1.267 = 2.533$ W in the devices. At full output: 7.958 W supplied, 6.250 W in the load and $2 \times 0.854 = 1.708$ W in the devices. Both balance exactly, so the three answers are mutually consistent.

Final Results

PartQuantityResult
(a)Maximum load power, PL,max6.25 W (at V̂o = 10 V)
(b)Amplitude giving worst-case device dissipationV̂o = 2VCC/π = 6.37 V
(b)Maximum dissipation in Q1, PD1,max1.267 W (= VCC2/π2RL)
(c)Maximum efficiency, ηmax78.5 % (= π/4)
—Supply power at full output, PS7.96 W
—Dissipation per device at full output0.854 W

Check — assumptions carried into the numbers. (i) The paper gives no saturation voltage, so VCE,sat is taken as zero and the peak output equals the rail. If a realistic VCE,sat = 0.3 V were allowed, V̂o would fall to 9.7 V, giving PL,max = 5.88 W and ηmax = 76.2 %; the part (b) answer is unchanged because 6.37 V is well inside the linear range either way. (ii) The diodes and the two bias current sources are explicitly excluded from the power accounting by the question, so η here is the output-stage efficiency, not the efficiency of the whole amplifier. (iii) "Negligible current around VIN = 0" is what makes this a class-B rather than a class-AB calculation; a real D1/D2-biased stage carries a small quiescent IQ that adds 2VCCIQ of standing dissipation and slightly lowers η.

← Paper overview