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22-Elec-B5 Advanced Electronics · May 2016

Question 3 of 5: Bipolar cascode (Razavi Example 9.9) — mid-band voltage gain

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

Paper format. National Exams, May 2016 — 07-Elec-B5 Advanced Electronics. Three hours, CLOSED BOOK; any non-communicating calculator permitted. Answer all FIVE (5) questions; all questions are worth 20 marks each. Ground and chassis are common in every schematic; op-amps are ideal and supplies are ±15 V unless a question states otherwise. Candidates are urged to state any interpretation assumption inside their answer — this solution does so in the shaded Check callouts.

Reference texts.

Check — how the schematics below were obtained. Every question on this paper carries load-bearing data that exists only in the drawing (which branch a reactance sits in, which terminal a source drives, whether a bypass capacitor is present). Where the drawing is under-specified, the reading adopted is stated in a Check callout inside that question rather than being buried in the arithmetic.

Question 3: Bipolar cascode (Razavi Example 9.9) — mid-band voltage gain (20 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Given.

QuantitySymbolValue
Bias current (both devices)I11 mA
Cascode base biasVb15 V
SupplyVCC10 V
Common-emitter current gainβ100
Early voltageVA5 V
Thermal voltage (Razavi convention)VT26 mV

Find. The small-signal mid-band voltage gain vOUT/vIN of the cascode, loaded only by the ideal current source I1.

VCCI1vOUTQ2Vb1Q1vIN
Question 3 — bipolar cascode. Q1 is the common-emitter input device, Q2 the common-base cascode held at Vb1, and the ideal source I1 is an open circuit to the signal.

Approach. Get the three small-signal parameters from the 1 mA bias, build the cascode output resistance by driving ro2 from the degenerating resistance seen at Q2's emitter, then multiply by the transconductance of the input device.

  1. Extract the small-signal parameters at 1 mA. Both transistors are in the same branch and carry $I_C \approx I_1 = 1$ mA (base currents are $I_C/\beta = 10\ \mu\text{A}$, a 1 % effect that the question invites us to ignore). Therefore $$g_m=\frac{I_C}{V_T}=\frac{1\ \text{mA}}{26\ \text{mV}}=38.46\ \text{mA/V},\qquad r_\pi=\frac{\beta}{g_m}=2.60\ \text{k}\Omega,\qquad r_o=\frac{V_A}{I_C}=5.00\ \text{k}\Omega.$$
  2. Identify the topology. Q1 is a common-emitter stage with its emitter grounded and vIN at its base; Q2 sits above it with its base held at the fixed d.c. potential Vb1 (a signal ground), so Q2 is a common-base current buffer. The load is the ideal source I1, which is an open circuit to the signal, so the whole gain is set by the resistance looking down into Q2's collector.
  3. Find the resistance degenerating Q2. Looking down from Q2's emitter, ro1 appears in parallel with rπ2 (the latter runs to the a.c.-grounded base of Q2): $$R_E = r_{o1}\parallel r_{\pi 2} = \frac{(5.00)(2.60)}{5.00+2.60} = 1.711\ \text{k}\Omega.$$ Because $V_A$ is only 5 V, ro1 is small and rπ2 shunts a substantial part of the signal current — this is the term that separates a bipolar cascode from a MOS one.
  4. Build the cascode output resistance. A transistor degenerated by RE presents $$R_{out}=r_{o2}\bigl(1+g_{m2}R_E\bigr)+R_E = 5.00\bigl(1+38.46\times 1.711\bigr)+1.711\ \text{k}\Omega,$$ and with $g_{m2}R_E = 65.79$ this evaluates to $$R_{out} = 5.00(66.79)+1.71 = \boxed{336\ \text{k}\Omega}.$$
  5. Check the result against the cascode ceiling. Since $R_E \le r_{\pi 2}$ and $g_{m2}r_{\pi 2}=\beta$, the output resistance of any bipolar cascode can never exceed $\beta r_o = 100 \times 5\ \text{k}\Omega = 500\ \text{k}\Omega$. The 336 kΩ obtained sits sensibly below that ceiling. (Dropping rπ2 and writing $r_{o2}(1+g_{m2}r_{o1}) = 966\ \text{k}\Omega$ — the standard error — would violate it outright.)
  6. Convert to voltage gain. The transconductance of the composite is that of the input device, $G_m \approx g_{m1}$, because Q2 passes essentially all of Q1's collector current to the output node. Hence $$A_v=\frac{v_{OUT}}{v_{IN}}=-G_m R_{out} = -(38.46\ \text{mA/V})(335.7\ \text{k}\Omega) = \boxed{-1.29\times 10^{4}}$$ i.e. a gain magnitude of about 12 900, or 82.2 dB, inverting.
  7. Cross-check with an exact nodal solution. Solving the two-node small-signal network exactly (retaining rπ2 in the forward path as well as in RE) gives −1.27×104, 1.5 % below the $G_m R_{out}$ product. The small shortfall is precisely the fraction of Q1's collector current that leaks into rπ2 instead of reaching the output, which the $G_m \approx g_{m1}$ approximation ignores.

Final Results

QuantitySymbolResult
Transconductancegm38.46 mA/V
Base input resistancerπ2.60 kΩ
Early resistancero5.00 kΩ
Degeneration at Q2's emitterro1||rπ21.71 kΩ
Cascode output resistanceRout336 kΩ
Mid-band voltage gainvOUT/vIN−1.29 × 104 (82.2 dB)
Theoretical ceilingβro, gmβro500 kΩ, 1.92 × 104

Check — the thermal voltage and the load. (i) The question does not state VT, but it names its source (Razavi, Fundamentals of Microelectronics, Example 9.9, p. 405), and Razavi uses VT = 26 mV throughout; that convention is adopted here. Working instead with the 25 mV used by Sedra & Smith gives gm = 40 mA/V, Rout = 340 kΩ and Av = −1.36×104 — a 5 % spread, identical method, and equally defensible under the paper's own instruction 1. (ii) Vb1 = 5 V and VCC = 10 V do not enter the small-signal answer at all; they only confirm that both devices are in the forward-active region, with VCE1 ≈ 4.3 V and about 5 V across Q2. (iii) The paper labels the supply VDD in the given list even though the circuit is bipolar; it is the VCC marked on the schematic.