Question 3 of 5: Class B Output Stage — Output Power, Device Dissipation and Efficiency
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Notes on this paper
Paper format. National Exams, December 2019 — 16-Elec-B5
Advanced Electronics. Three hours; CLOSED BOOK, an approved Casio or Sharp
calculator permitted. Five questions, ALL to be answered, 20 marks each. Op-amps are
ideal and the supplies are ±15 V unless a question states otherwise; in
schematics ground and chassis are common. Where a question leaves an interpretation
open, the paper's own Note 1 invites the candidate to state the assumption inside the
answer — every such assumption below is flagged in a check callout.
Reference texts. A. S. Sedra and K. C. Smith, Microelectronic
Circuits, 8th ed. — Ch. 7 (transistor amplifiers and biasing), Ch. 8
(differential and multistage amplifiers, offset voltage), Ch. 10 (frequency response,
short-circuit time constants), Ch. 11 (output stages and power amplifiers), Ch. 12
(feedback topologies). B. Razavi, Fundamentals of Microelectronics, 2nd ed.,
Ch. 8 (operational amplifier as a black box, non-linear feedback elements) and
Ch. 10 (differential amplifiers). P. Gray, P. Hurst, S. Lewis and R. Meyer,
Analysis and Design of Analog Integrated Circuits, 5th ed., Ch. 3
(single-transistor amplifiers) and Ch. 8 (feedback).
Check — the paper's own MOSFET convention.
The formula sheet printed with Question 1 defines the saturation current as
$i_{DS}=\tfrac12 K\,(v_{GS}-V_{TH})^2$ with $K=K'(W/L)=\mu C_{ox}(W/L)$, and that
convention is used throughout Questions 1 and 5. Question 2 is the one place where it
does not close: with $K=1\ \text{mA/V}^2$ and $V_{GS}=2$ V the sheet would give
$I_D=0.5$ mA, whereas the bias network of Question 2 fixes $I_D=1$ mA by three
independent routes (the gate divider, $V_S/R_S$, and the stated $V_D$). The bias data
therefore governs there, and the transconductance is taken as $g_m=2I_D/V_{ov}$,
which is convention-free. Both readings are quoted in Question 2, Step 2.
Question 3: Class B Output Stage — Output Power, Device Dissipation and Efficiency (20 marks)
Find. The maximum sinusoidal output power delivered to $R_L$, the power
each output device dissipates while that maximum is being delivered, and the resulting
power-conversion efficiency.
Figure 3.1 — The complementary class B (push–pull) emitter-follower output stage. The npn device $Q_2$ sources current into $R_L$ on positive half-cycles and the pnp device $Q_1$ sinks it on negative half-cycles; each conducts for exactly half a cycle. The question labels the lower device M1; the schematic labels it $Q_1$, and the two are the same transistor.
Approach. Take the peak output as the rail, since the stage is an
emitter follower and the drive is assumed ideal, then integrate the half-sine current
waveforms over a full cycle to get the supply power and the per-device dissipation; the
efficiency is the ratio of the two, and the power balance
$P_{S}=P_{L}+2P_{D}$ is a free check on all three answers.
Check — what limits the peak output. With an
ideal driver and $V_{CE,sat}$ neglected, the peak output equals the rail,
$\hat V_o = V_{CC} = 20$ V, and that is the reading taken for the boxed answers below (it is
the textbook maximum-output condition and the one the phrase "maximum RMS output power"
selects). If instead the input is clamped to the rail so that the follower loses one
$V_{BE,on}$, the peak becomes $\hat V_o = 20-0.7 = 19.3$ V and the answers become
$P_L = 23.28$ W, $P_{D}=3.72$ W per device and $\eta = 75.8$ per cent — a 7 per cent
change in output power and no change in method. The stated $\beta = 50$ does not enter any
of the three answers; it sizes the drive, with a peak base current of
$\hat I_B = (\hat V_o/R_L)/(\beta+1) = 2.5/51 = 49.0$ mA that the preceding stage must
supply.
Part (a) — find the peak and RMS output quantities. Each device is
an emitter follower, so the output tracks the input to within a $V_{BE}$ and the peak output
swing is set by the rail:
$$\begin{aligned}
\hat V_o &= V_{CC} = 20\ \text{V},\\
\hat I_o &= \frac{\hat V_o}{R_L} = \frac{20\ \text{V}}{8\ \Omega} = 2.5\ \text{A}.
\end{aligned}$$
For a sinusoid the RMS values are the peaks divided by $\sqrt2$, i.e.
$V_{o,rms}=14.14$ V and $I_{o,rms}=1.768$ A.
Evaluate the maximum output power. The load power is the product of the
RMS quantities, which is the familiar half-peak-squared form:
$$P_L = V_{o,rms}I_{o,rms} = \frac{\hat V_o^2}{2R_L} = \frac{(20\ \text{V})^2}{2\times 8\ \Omega} = \frac{400}{16},$$
$$\boxed{P_{L,\max} = 25.0\ \text{W}}$$
Part (b) — get the supply power first. Each supply delivers current
only during its own half-cycle, so each sees a half-wave-rectified sinusoid whose average
value is $\hat I_o/\pi$. The total power drawn from the two rails is therefore
$$P_S = V_{CC}\frac{\hat I_o}{\pi} + V_{EE}\frac{\hat I_o}{\pi} = \frac{2V_{CC}\hat V_o}{\pi R_L} = \frac{2\times 20\times 20}{\pi\times 8} = 31.83\ \text{W}.$$
Note that the supply power rises only linearly with output amplitude while the load power
rises quadratically — the reason class B is inefficient at small signals and efficient
at full drive.
Split the difference between the two devices. The stage dissipates
whatever the supplies deliver and the load does not take, and by symmetry the two devices
share it equally, so
$$P_D = \frac{P_S-P_L}{2} = \frac{V_{CC}\hat V_o}{\pi R_L}-\frac{\hat V_o^2}{4R_L} = \frac{20\times 20}{\pi\times 8}-\frac{400}{4\times 8} = 15.92-12.50 ,$$
$$\boxed{P_{D}(Q_1) = 3.42\ \text{W}}$$
This is the dissipation in the device the question calls M1 (the lower, pnp device $Q_1$);
$Q_2$ dissipates the same 3.42 W. The power balance closes exactly:
$P_S-P_L = 31.83-25.00 = 6.83\ \text{W} = 2\times 3.42$ W.
Part (c) — form the efficiency. The power-conversion efficiency is
the load power divided by the power drawn from the supplies:
$$\eta = \frac{P_L}{P_S} = \frac{\hat V_o^2/(2R_L)}{2V_{CC}\hat V_o/(\pi R_L)} = \frac{\pi}{4}\,\frac{\hat V_o}{V_{CC}} = \frac{\pi}{4}\times 1 ,$$
$$\boxed{\eta = \frac{\pi}{4} = 78.5\ \text{per cent}}$$
The result is the theoretical class B maximum, reached here because the peak output was
taken to be the full rail; any real saturation voltage or lost $V_{BE}$ scales it down by
the ratio $\hat V_o/V_{CC}$, as the callout above shows.
Sanity-check the thermal consequence. Worth stating in an exam answer:
maximum output is not the worst case for the transistors. Differentiating
$P_D=V_{CC}\hat V_o/(\pi R_L)-\hat V_o^2/(4R_L)$ gives a maximum at
$\hat V_o = 2V_{CC}/\pi = 12.73$ V, where each device dissipates
$V_{CC}^2/(\pi^2 R_L) = 5.07$ W — about 48 per cent more than at full output. A heat
sink sized on the 3.42 W figure would be undersized.