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17-Phys-A5 · May 2018

Question 6 of 6: CMOS Logic Gate — Pull-Down Network by PUN/PDN Duality

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

17-Phys-A5-B, Analog and Digital Electronic Circuits — National Exams, May 2018. 6 questions, marks as shown in the paper's marking scheme (Q1: 15; Q2: 10+10; Q3: 10+10; Q4: 15; Q5: 5+10; Q6: 10+5). Open-book exam; any non-communicating calculator permitted.

Reference texts: A. S. Sedra and K. C. Smith, Microelectronic Circuits, 8th ed. (Sedra-Smith) — used throughout for BJT/MOSFET biasing, current mirrors, op-amp and feedback-amplifier analysis. M. M. Mano and M. D. Ciletti, Digital Design, 6th ed. (Mano-Digital) — used for the CMOS pull-up/pull-down duality construction in Question 6.

Question 6: CMOS Logic Gate — Pull-Down Network by PUN/PDN Duality (10+5 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Given. PUN (all PMOS) between $V_{DD}$ and $Y$: a top block of $C$ and $D$ in parallel, in series with a bottom block of $A$ in parallel with ($B$ in series with $C$).

Find. (a) The dual PDN and the complete CMOS gate. (b) The Boolean function $Y(A,B,C,D)$.

VDDCDABCY (PUN, given)
Fig. 6 (given) — PUN: $(C\Vert D)$ in series with $\big(A\Vert(B\text{ series }C)\big)$, all PMOS.

Approach. Apply the standard CMOS duality construction — replace every PMOS by an NMOS on the SAME gate signal, and swap every series connection for parallel and every parallel connection for series — then read the switch-conduction function directly from the PUN (PMOS closes when its gate input is 0) to get $Y$.

  1. Dualize each block. Series $\leftrightarrow$ parallel, same gate labels, PMOS $\to$ NMOS: the top block $(C\Vert D)$ becomes $(C\text{ series }D)$; the bottom block $\big(A\Vert(B\text{ series }C)\big)$ becomes $\big(A\text{ series }(B\Vert C)\big)$.
  2. Dualize the outer connection. The two blocks are in SERIES in the PUN, so in the PDN they go in PARALLEL: $$\text{PDN}=(C\cdot D)\ \Vert\ \big(A\cdot(B\Vert C)\big),\quad\text{all NMOS, gates }A,B,C,D.$$
  3. Complete CMOS gate. The PDN (Fig. 6b) sits between $Y$ and ground, with the given PUN unchanged between $V_{DD}$ and $Y$ — every input drives one PMOS in the PUN and one NMOS in the PDN, satisfying the standard CMOS complementary-network requirement (exactly one of PUN/PDN conducts for any input combination).
  4. (b) Boolean function, from the PUN switch model. A PMOS switch closes when its input is 0, so writing each block's "closed" condition directly: $$T_{top}=\bar C+\bar D,\qquad T_{bot}=\bar A+\bar B\bar C,\qquad Y=T_{top}\cdot T_{bot}=(\bar C+\bar D)(\bar A+\bar B\bar C).$$ Expanding and dropping the term absorbed by $\bar B\bar C$ (since $\bar B\bar C+\bar B\bar C\bar D=\bar B\bar C$): $$\boxed{Y=\bar A\bar C+\bar B\bar C+\bar A\bar D = \bar C(\bar A+\bar B)+\bar A\bar D}.$$
YCDABC
Fig. 6b (derived) — PDN: $(C\cdot D)$ in parallel with $\big(A\cdot(B\Vert C)\big)$, all NMOS on the same four gate signals as the given PUN.
Final results
QuantityResult
PDN topology$(C\cdot D)\ \Vert\ \big(A\cdot(B\Vert C)\big)$, NMOS
Boolean function $Y$$\bar A\bar C+\bar B\bar C+\bar A\bar D$
Check
The PUN conduction function, the simplified SOP above, and the PDN-vs-$\overline{Y}$ duality were all cross-checked against the full 16-row truth table (exhaustive, not spot-checked) — zero mismatches.
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