Question 6 of 6: CMOS Logic Gate — Pull-Down Network by PUN/PDN Duality
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Notes on this paper
17-Phys-A5-B, Analog and Digital Electronic Circuits — National Exams, May 2018. 6 questions, marks as shown in the paper's marking scheme (Q1: 15; Q2: 10+10; Q3: 10+10; Q4: 15; Q5: 5+10; Q6: 10+5). Open-book exam; any non-communicating calculator permitted.
Reference texts: A. S. Sedra and K. C. Smith, Microelectronic Circuits, 8th ed. (Sedra-Smith) — used throughout for BJT/MOSFET biasing, current mirrors, op-amp and feedback-amplifier analysis. M. M. Mano and M. D. Ciletti, Digital Design, 6th ed. (Mano-Digital) — used for the CMOS pull-up/pull-down duality construction in Question 6.
Given. PUN (all PMOS) between $V_{DD}$ and $Y$: a top block of $C$ and $D$ in parallel, in series with a bottom block of $A$ in parallel with ($B$ in series with $C$).
Find. (a) The dual PDN and the complete CMOS gate. (b) The Boolean function $Y(A,B,C,D)$.
Fig. 6 (given) — PUN: $(C\Vert D)$ in series with $\big(A\Vert(B\text{ series }C)\big)$, all PMOS.
Approach. Apply the standard CMOS duality construction — replace every PMOS by an NMOS on the SAME gate signal, and swap every series connection for parallel and every parallel connection for series — then read the switch-conduction function directly from the PUN (PMOS closes when its gate input is 0) to get $Y$.
Dualize each block. Series $\leftrightarrow$ parallel, same gate labels, PMOS $\to$ NMOS: the top block $(C\Vert D)$ becomes $(C\text{ series }D)$; the bottom block $\big(A\Vert(B\text{ series }C)\big)$ becomes $\big(A\text{ series }(B\Vert C)\big)$.
Dualize the outer connection. The two blocks are in SERIES in the PUN, so in the PDN they go in PARALLEL: $$\text{PDN}=(C\cdot D)\ \Vert\ \big(A\cdot(B\Vert C)\big),\quad\text{all NMOS, gates }A,B,C,D.$$
Complete CMOS gate. The PDN (Fig. 6b) sits between $Y$ and ground, with the given PUN unchanged between $V_{DD}$ and $Y$ — every input drives one PMOS in the PUN and one NMOS in the PDN, satisfying the standard CMOS complementary-network requirement (exactly one of PUN/PDN conducts for any input combination).
(b) Boolean function, from the PUN switch model. A PMOS switch closes when its input is 0, so writing each block's "closed" condition directly: $$T_{top}=\bar C+\bar D,\qquad T_{bot}=\bar A+\bar B\bar C,\qquad Y=T_{top}\cdot T_{bot}=(\bar C+\bar D)(\bar A+\bar B\bar C).$$ Expanding and dropping the term absorbed by $\bar B\bar C$ (since $\bar B\bar C+\bar B\bar C\bar D=\bar B\bar C$): $$\boxed{Y=\bar A\bar C+\bar B\bar C+\bar A\bar D = \bar C(\bar A+\bar B)+\bar A\bar D}.$$
Fig. 6b (derived) — PDN: $(C\cdot D)$ in parallel with $\big(A\cdot(B\Vert C)\big)$, all NMOS on the same four gate signals as the given PUN.
The PUN conduction function, the simplified SOP above, and the PDN-vs-$\overline{Y}$ duality were all cross-checked against the full 16-row truth table (exhaustive, not spot-checked) — zero mismatches.