Question 1 of 6: PNP common-emitter amplifier — gain and bandwidth
Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)
Notes on this paper
Paper format. National Exams, May 2013 — 07-Elec-B5
Advanced Electronics. Three hours, closed book; one approved
Casio or Sharp calculator is permitted. Six questions are printed and five (5)
constitute a complete paper — the first five appearing in the answer book
are marked — and every question is worth 20 marks. In schematics ground and chassis
may be assumed common; op-amps are ideal with ±15 V rails unless stated otherwise.
All six questions are solved here, because this set is a study resource
rather than a timed sitting.
Reference texts. A. S. Sedra, K. C. Smith, T. C. Carusone and
V. Gaudet, Microelectronic Circuits, 8th ed. — the recommended reference
for this exam code: Ch. 7 (transistor amplifiers and small-signal models), Ch. 8
(differential and multistage amplifiers), Ch. 10 (frequency response and the Miller
effect), Ch. 11 (feedback topologies and their resistance transformations), Ch. 12
(class-AB output stages) and Ch. 13 (data converters). Supplementary:
B. Razavi, Design of Analog CMOS Integrated Circuits, 2nd ed. (cascodes, CMRR,
tuned stages) and P. R. Gray, P. J. Hurst, S. H. Lewis and R. G. Meyer, Analysis and
Design of Analog Integrated Circuits, 5th ed.
How the numbers were checked.
Question 1: PNP common-emitter amplifier — gain and bandwidth (20 marks)
Given. A single PNP transistor is biased by a 1 mA current
source feeding its emitter from the positive rail; the emitter is tied to signal ground by
an infinite bypass capacitor, so the stage is a common-emitter amplifier driven at the base
through a coupling capacitor and loaded by $R_{L}$ to the negative rail.
Given data (Question 1)
Quantity
Symbol
Value
Current gain
$\beta$
100
Emitter-base voltage
$V_{EB}$
0.7 V
Saturation voltage
$V_{EC(\text{sat})}$
0.3 V
Early voltage
$V_{A}$
100 V
Collector-base capacitance
$C_{\mu}$
2 pF
Source resistance
$R_{S}$
600 $\Omega$
Collector load
$R_{L}$
5 k$\Omega$
Base bias resistor
$R_{1}$
1 k$\Omega$
Input coupling capacitor
$C_{1}$
10 $\mu$F
Emitter bypass capacitor
$C_{2}$
$\infty$
Supply rails
$\pm V$
$\pm$10 V
Bias current
$I_{bias}$
1 mA
Thermal voltage
$V_{T}$
25 mV
Find. The mid-band voltage gain referred to the source
$v_{OUT}/v_{S}$, the lower and upper 3 dB corner frequencies, and the
second (non-dominant) high-frequency pole.
Question 1 — PNP common-emitter stage. The 1 mA source sets the emitter current; C2 = ∞ holds the emitter at signal ground, so C1 is the only capacitor that produces a low-frequency pole.
Approach. Fix the bias current, convert it to
$g_{m}$ and $r_{\pi}$, evaluate the mid-band gain as an input
divider followed by $-g_{m}R_{L}$, then treat the two frequency ends
separately: the single coupling capacitor gives $f_{L}$, and a Miller split
of $C_{\mu}$ gives the input and output high-frequency poles.
Fix the d.c. operating point and confirm the transistor is active.
The current source sets the emitter current directly, so
$$I_{E}=I_{bias}=1\ \text{mA},\qquad
I_{C}=\alpha I_{E}=\frac{\beta}{\beta+1}I_{E}=\frac{100}{101}(1\ \text{mA})=0.990\ \text{mA},$$
and the base current is $I_{B}=I_{E}/(\beta+1)=9.90\ \mu\text{A}$. For a PNP device that
current leaves the base and flows through $R_{1}$ to ground, so
$V_{B}=-I_{B}R_{1}=-9.9\ \text{mV}$, $V_{E}=V_{B}+V_{EB}=0.690\ \text{V}$ and
$V_{C}=-V_{EE}+I_{C}R_{L}=-10+4.95=-5.05\ \text{V}$. Hence
$$\boxed{V_{EC}=V_{E}-V_{C}=5.74\ \text{V}\ \gg\ V_{EC(\text{sat})}=0.3\ \text{V}}$$
so the transistor is comfortably in the forward-active region and the bias source still has
$V_{CC}-V_{E}=9.31\ \text{V}$ of compliance.
Convert the bias current into small-signal parameters. Because the
question asks for an estimate, take $I_{C}\approx I_{E}=1\ \text{mA}$ (the
$\alpha$ correction is checked at the end of this answer and moves the gain by less than
1 %). Then
$$g_{m}=\frac{I_{C}}{V_{T}}=\frac{1\ \text{mA}}{25\ \text{mV}}=40\ \text{mA/V},\qquad
r_{\pi}=\frac{\beta}{g_{m}}=\frac{100}{40\ \text{mA/V}}=2.5\ \text{k}\Omega .$$
The paper instructs us to neglect $r_{x}$ and $r_{o}$; for the record
$r_{o}=V_{A}/I_{C}=100\ \text{k}\Omega$, twenty times $R_{L}$, which is why dropping it is
legitimate here.
Part (a) — split the mid-band gain into an input divider and a
transconductance stage. In the mid-band $C_{1}$ is a short and $C_{2}$ holds the
emitter at signal ground, so the stage is a textbook common-emitter amplifier. Looking into
the base the source sees
$$R_{in}=R_{1}\parallel r_{\pi}=\frac{(1\ \text{k}\Omega)(2.5\ \text{k}\Omega)}
{1\ \text{k}\Omega+2.5\ \text{k}\Omega}=714.3\ \Omega ,$$
so only part of the source voltage reaches the base:
$$\frac{v_{b}}{v_{S}}=\frac{R_{in}}{R_{S}+R_{in}}=\frac{714.3}{600+714.3}=0.5435 .$$
The collector then delivers $v_{OUT}/v_{b}=-g_{m}R_{L}=-(40\ \text{mA/V})(5\ \text{k}\Omega)=-200$,
and multiplying the two factors gives
$$\boxed{\frac{v_{OUT}}{v_{S}}=-200\times0.5435=-108.7\ \text{V/V}}$$
an inverting gain of magnitude 108.7, or 40.7 dB. Note how much gain the source
resistance costs: driving the base from an ideal source would have given the full 200.
Part (b) — find the single low-frequency pole. Only $C_{1}$ can
produce a low-frequency pole, because $C_{2}=\infty$ is a perfect short at every frequency
of interest and the bias current source is an open circuit to signal. Killing the source
and looking out from the terminals of $C_{1}$, the resistance is the series combination of
what lies on each side:
$$R_{C1}=R_{S}+\left(R_{1}\parallel r_{\pi}\right)=600+714.3=1314.3\ \Omega .$$
A single pole set by one capacitor and one resistance puts the 3 dB point at
$$\boxed{f_{L}=\frac{1}{2\pi R_{C1}C_{1}}
=\frac{1}{2\pi(1314.3\ \Omega)(10\ \mu\text{F})}=12.1\ \text{Hz}}$$
comfortably below the audio band, which is exactly what a 10 $\mu$F coupling
capacitor is chosen to achieve.
Part (c) — Miller-split the collector-base capacitance and find the
dominant high-frequency pole. With $r_{x}$ neglected and no $C_{\pi}$ specified,
$C_{\mu}$ bridges base and collector across a voltage gain of $-g_{m}R_{L}=-200$. The
Miller theorem replaces it by a capacitance to ground at each node,
$$C_{M,in}=C_{\mu}\left(1+g_{m}R_{L}\right)=2\ \text{pF}\times201=402\ \text{pF},\qquad
C_{M,out}=C_{\mu}\left(1+\frac{1}{g_{m}R_{L}}\right)=2.01\ \text{pF}.$$
At the base the driving resistance is now everything in parallel, because $C_{1}$ is a
short at high frequency:
$$R_{B}=R_{S}\parallel R_{1}\parallel r_{\pi}=600\parallel1000\parallel2500=326.1\ \Omega,$$
which places the input pole at
$$\boxed{f_{H}=\frac{1}{2\pi R_{B}C_{M,in}}
=\frac{1}{2\pi(326.1\ \Omega)(402\ \text{pF})}=1.21\ \text{MHz}}$$
This is the upper 3 dB frequency, since the second pole computed next is more than
ten times higher.
Part (d) — evaluate the pole at the output node. The output node
sees $C_{M,out}$ against the collector load alone, $R_{L}=5\ \text{k}\Omega$ (recall
$r_{o}$ is neglected), so
$$\boxed{f_{p2}=\frac{1}{2\pi R_{L}C_{M,out}}
=\frac{1}{2\pi(5\ \text{k}\Omega)(2.01\ \text{pF})}=15.8\ \text{MHz}}$$
Because $f_{p2}/f_{H}=13$, the dominant-pole approximation used in part (c) is self
consistent: the second pole contributes only about 0.03 dB of extra roll-off at
$f_{H}$, so quoting $f_{H}$ as the upper 3 dB frequency is sound.
The stage therefore has a mid-band gain of about 109 and a usable band from roughly
12 Hz to 1.2 MHz, a gain–bandwidth product of about 132 MHz.
Question 1 — final results
Part
Quantity
Result
(a)
Mid-band gain $v_{OUT}/v_{S}$
$-108.7$ V/V (40.7 dB)
(b)
Lower 3 dB frequency $f_{L}$
12.1 Hz
(c)
Upper 3 dB frequency $f_{H}$
1.21 MHz
(d)
Second high-frequency pole $f_{p2}$
15.8 MHz
Check: two modelling choices worth stating. (i) The paper says to neglect $r_{o}$ yet still supplies $V_{A}=100\ \text{V}$; retaining
$r_{o}=100\ \text{k}\Omega$ would replace $R_{L}$ by
$R_{L}\parallel r_{o}=4.76\ \text{k}\Omega$ and reduce the magnitude of the gain by about
5 %. (ii) Using the exact $I_{C}=\alpha I_{E}=0.990\ \text{mA}$ instead of the estimate
$I_{C}\approx1\ \text{mA}$ gives $g_{m}=39.6\ \text{mA/V}$ and a gain of
$-107.8\ \text{V/V}$, a change of 0.9 %.