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22-Elec-B5 Advanced Electronics · May 2013

Question 5 of 6: Tuned amplifier with a series-resonant trap

Nivaar worked solution (AI-drafted; not reviewed by a licensed engineer)

Notes on this paper

Paper format. National Exams, May 2013 — 07-Elec-B5 Advanced Electronics. Three hours, closed book; one approved Casio or Sharp calculator is permitted. Six questions are printed and five (5) constitute a complete paper — the first five appearing in the answer book are marked — and every question is worth 20 marks. In schematics ground and chassis may be assumed common; op-amps are ideal with ±15 V rails unless stated otherwise. All six questions are solved here, because this set is a study resource rather than a timed sitting.

Reference texts. A. S. Sedra, K. C. Smith, T. C. Carusone and V. Gaudet, Microelectronic Circuits, 8th ed. — the recommended reference for this exam code: Ch. 7 (transistor amplifiers and small-signal models), Ch. 8 (differential and multistage amplifiers), Ch. 10 (frequency response and the Miller effect), Ch. 11 (feedback topologies and their resistance transformations), Ch. 12 (class-AB output stages) and Ch. 13 (data converters). Supplementary: B. Razavi, Design of Analog CMOS Integrated Circuits, 2nd ed. (cascodes, CMRR, tuned stages) and P. R. Gray, P. J. Hurst, S. H. Lewis and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, 5th ed.

How the numbers were checked.

Question 5: Tuned amplifier with a series-resonant trap (20 marks)

Question text not reproduced: the examination questions are © Engineers and Geoscientists BC. Open the official past paper (linked at the top of this page) to read the question, then follow the worked solution below.

Given. A common-source stage whose source is held at signal ground by $C_{2}=\infty$ and biased by a 2 mA current source to $-V_{SS}$. Its drain load is a series combination of $L_{1}$ and $C_{1}$ placed in parallel with the drain resistor; the output is taken at the drain and the gate is driven from $v_{S}$ through the source resistance $R_{S}$.

Given data (Question 5)
QuantitySymbolValue
Bias current$I_{bias}$2 mA
Transconductance parameter$K$1 mA/V$^{2}$
Threshold voltage$V_{TH}$1 V
Gate-source capacitance$C_{gs}$10 pF
Gate-drain capacitance$C_{gd}$1 pF
Channel-length modulation$\lambda$0
Tank inductance$L_{1}$1 $\mu$H
Tank capacitance$C_{1}$200 pF
Source bypass$C_{2}$$\infty$
Source resistance$R_{S}$1 k$\Omega$
Drain load$R_{L}$2 k$\Omega$
Supplies$V_{DD}$, $V_{SS}$+10 V, $-$10 V

Find. The centre frequency $\omega_{o}$ set by the reactive branch, the voltage gain $v_{OUT}/v_{S}$ at that frequency, and the asymptotic gains at very high and very low frequency.

[Figure not reproduced: Question 5 — common-source stage whose drain load is a series L 1 – C 1 branch in parallel with R L . Drawn as printed: the inductor and capacitor are in series in one branch, which makes the network a trap rather than a bandpass tank. See the official exam paper.]

Approach. Convert the bias current to $g_{m}$, write the drain load as $R_{L}$ in parallel with the series branch $j\omega L_{1}+1/(j\omega C_{1})$, and evaluate $A_{v}=-g_{m}Z$ at the three frequencies the question asks about, bringing in the device capacitances only where they matter.

  1. Bias the transistor and find its transconductance. The current source sets $I_{D}=I_{bias}=2\ \text{mA}$, so from $I_{D}=\tfrac{1}{2}K\left(V_{GS}-V_{TH}\right)^{2}$, $$V_{ov}=\sqrt{\frac{2I_{D}}{K}}=\sqrt{\frac{2(2\ \text{mA})}{1\ \text{mA/V}^{2}}} =2\ \text{V},\qquad V_{GS}=3\ \text{V},$$ $$\boxed{g_{m}=KV_{ov}=(1\ \text{mA/V}^{2})(2\ \text{V})=2\ \text{mA/V}}$$ With $\lambda=0$ the output resistance is infinite, so the drain behaves as an ideal current source of strength $g_{m}v_{gs}$ and the whole frequency dependence lives in the load network. Since the MOS gate draws no current, $R_{S}$ does not attenuate the drive at low or mid frequencies; it matters only in part (c).
  2. Part (a) — locate the resonance of the reactive branch. As printed, $L_{1}$ and $C_{1}$ sit in series in one branch, so their combined reactance vanishes when $\omega L_{1}=1/(\omega C_{1})$: $$\boxed{\omega_{o}=\frac{1}{\sqrt{L_{1}C_{1}}} =\frac{1}{\sqrt{(1\ \mu\text{H})(200\ \text{pF})}}=7.071\times10^{7}\ \text{rad/s} \;\Longrightarrow\; f_{o}=11.25\ \text{MHz}}$$ The characteristic impedance of the branch is $\sqrt{L_{1}/C_{1}}=70.7\ \Omega$, well below $R_{L}=2\ \text{k}\Omega$, which tells us in advance that the branch will dominate the load over a wide band around $\omega_{o}$.
  3. Part (b) — evaluate the load impedance at resonance. The total drain load is $$Z\left(j\omega\right)=R_{L}\parallel\left(j\omega L_{1}+\frac{1}{j\omega C_{1}}\right) =R_{L}\parallel jX,\qquad X=\omega L_{1}-\frac{1}{\omega C_{1}} .$$ At $\omega=\omega_{o}$ the reactance $X$ is zero, so the series branch is a short circuit that ties the drain straight to $V_{DD}$ — which is signal ground. Therefore $Z(j\omega_{o})=0$ and $$\boxed{\left.\frac{v_{OUT}}{v_{S}}\right|_{\omega=\omega_{o}}=-g_{m}Z(j\omega_{o})=0}$$ This circuit is a trap: a band-reject, not a band-pass, amplifier, and $\omega_{o}$ is the centre of its notch. The rejection is complete only for an ideal inductor; any winding resistance $r$ leaves $Z=R_{L}\parallel r\approx r$ and a residual gain of $g_{m}r$, so a 2 $\Omega$ coil resistance would give a notch depth of about 52 dB rather than infinity.
  4. Establish how wide the notch is. The response is within 3 dB of its plateau when $|X|=R_{L}$, i.e. when $\omega L_{1}-1/(\omega C_{1})=\pm R_{L}$. Solving the resulting quadratic gives skirts at $$f_{lo}=397\ \text{kHz}\quad\text{and}\quad f_{hi}=319\ \text{MHz},$$ whose product satisfies $\omega_{lo}\omega_{hi}=\omega_{o}^{2}$ as it must. The notch is therefore extremely broad — nearly three decades either side — because the branch impedance $70.7\ \Omega$ is so much smaller than the load it shunts.
  5. Part (d) — take the low-frequency limit. As $\omega\to0$ the capacitor $C_{1}$ becomes an open circuit, the series branch disappears, and the drain sees $R_{L}$ alone. The device capacitances are open circuits as well, so $$\boxed{\left.\frac{v_{OUT}}{v_{S}}\right|_{\omega\rightarrow0}=-g_{m}R_{L} =-(2\ \text{mA/V})(2\ \text{k}\Omega)=-4\ \text{V/V}}$$ an inverting gain of 12.0 dB. There is no input coupling capacitor, so this is also the d.c. gain of the stage.
  6. Part (c) — take the high-frequency limit, and be careful about which element wins. Two things happen as $\omega$ rises above the notch. The inductive reactance $\omega L_{1}$ grows without bound, so the series branch opens and the load returns towards $R_{L}$ — considered alone, the tank would restore the gain to $-g_{m}R_{L}=-4$. But $C_{gs}$ and $C_{gd}$ do not stay open. Miller-multiplying $C_{gd}$ against the recovered gain gives an input capacitance $$C_{in}=C_{gs}+C_{gd}\left(1+g_{m}R_{L}\right)=10+1(1+4)=15\ \text{pF},$$ which works against $R_{S}=1\ \text{k}\Omega$ to give a corner at $$f_{H}=\frac{1}{2\pi R_{S}C_{in}}=\frac{1}{2\pi(1\ \text{k}\Omega)(15\ \text{pF})} =10.6\ \text{MHz},$$ essentially coincident with the notch. Above it, $C_{gs}$ shorts the gate to the source — which is signal ground — and $C_{gd}$ shorts the drain to the gate, so no signal survives: $$\boxed{\left.\frac{v_{OUT}}{v_{S}}\right|_{\omega\rightarrow\infty}=0}$$ The response plot below shows both curves: the tank-only load recovers to 12 dB above the notch, while the complete model including $C_{gs}$ and $C_{gd}$ peaks near $-10\ \text{dB}$ and then falls away for good.
10 k100 k1 M10 M100 M1 G10 G-40-30-20-1001020frequency f (Hz)gain magnitude (dB)20 log(gm​ RL​) = 12.04 dBf0​ = 11.25 MHz
Question 5 — magnitude response. Dashed grey: the tank load alone, showing the 12.04 dB plateau and the null at fo = 11.25 MHz. Solid: the complete model including Cgs, Cgd and RS, which rolls off to zero at very high frequency.

Read as a whole, the stage is a 12 dB amplifier with a deep notch at 11.25 MHz — the classic arrangement for suppressing a single interfering carrier or an image frequency ahead of a mixer, at the cost of the rest of the band being flat rather than selective.

Question 5 — final results
PartQuantityResult
—Bias: $V_{ov}$, $V_{GS}$, $g_{m}$2 V, 3 V, 2 mA/V
(a)Centre frequency $\omega_{o}$ $7.071\times10^{7}$ rad/s ($f_{o}$ = 11.25 MHz)
(b)Gain at $\omega=\omega_{o}$0 (series branch is a short)
(c)Gain at very high frequency 0 ($C_{gs}$, $C_{gd}$ dominate above $f_{H}$ = 10.6 MHz)
(d)Gain at very low frequency$-g_{m}R_{L}=-4$ V/V (12.0 dB)

Check: reading the printed component labels. The schematic labels the drain shunt resistor $R$ while the data list supplies $R_{S}=1\ \text{k}\Omega$ and $R_{L}=2\ \text{k}\Omega$, neither of which is drawn elsewhere. The only self-consistent assignment — and the one adopted here, stated as an assumption under the paper’s instruction to declare interpretations — is that the drain shunt resistor is the load $R_{L}=2\ \text{k}\Omega$ and that $R_{S}=1\ \text{k}\Omega$ is the source resistance in series with $v_{S}$ at the gate. That reading uses every datum given: $R_{L}$ sets parts (b) and (d), and $R_{S}$ together with $C_{gs}$ and $C_{gd}$ sets part (c). Note also that the reactive branch is drawn as $L_{1}$ in series with $C_{1}$; if the two were in parallel the network would be a conventional band-pass tank and the answers would invert, with $-g_{m}R_{L}=-4$ V/V at $\omega_{o}$ and zero gain at both extremes.